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Title: conventional tunneling full report
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Posted By: seminar presentation
Created at: Tuesday 18th of May 2010 10:33:41 PM
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SEMINAR ON-
CONVENTIONAL TUNNELLING
PRESENTED BY-
Namrata M. Lolge (09CM16F)
M. Tech. 1st sem
NITK
TUNNELLING TECHNIQUES



DEFINITION

A definition of Conventional Tunnelling can be the construction of underground openings of any shape with a cyclic construction process of-
1. excavation, by using the drill and blast methods or mechanical excavators (except any full face TBM)
2. mucking
3. placement of the primary support elements such as-
-steel ribs or lattice gir ....etc

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Title: Scanning Probe Microscopythe Scanning Tunneling Microscope
Page Link: Scanning Probe Microscopythe Scanning Tunneling Microscope -
Posted By: seminar class
Created at: Tuesday 22nd of March 2011 12:36:38 PM
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The best optical microscopes can see structures in the 200 – 400 nm range, at their limits of resolution.
The STM can “see” structures on the order of 0.1 nm —another SPM, the AFM—can distinguish things on the order of 100 nm .
Optical microscopes are “diffraction limited”—the wavelength range of visible light (400-750 nm) sets the size of the smallest thing that can be imaged: ~ 400 nm.
Scanning Probe Microscopes don’t use visible light—they depend on measuring intermolecular ....etc

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Title: Simulation and Design of NanocircuitsWith Resonant Tunneling Devices
Page Link: Simulation and Design of NanocircuitsWith Resonant Tunneling Devices -
Posted By: seminar class
Created at: Wednesday 04th of May 2011 06:11:40 PM
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Abstract
New nanotechnology-based devices are being researchedto replace CMOS devices in order to overcome CMOStechnology’s scaling limitations. However, many such devicesexhibit nonmonotonic I–V characteristics and uncertain propertieswhich lead to the negative differential resistance (NDR)problem and the chaotic performance. This paper proposes twonew circuit simulation approaches that can effectively simulatenanotechnology devices with uncertain input sources and negativedifferential resistance problem. A new tool called NanoSim ....etc

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Title: ppt on advanced construction equipments free download
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Title: fact mechanical projects condition monitoring on rotating equipments ppt download
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Created at: Thursday 05th of September 2013 02:48:18 PM
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Title: AIR MONITORING EQUIPMENTS
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Posted By: seminar projects crazy
Created at: Saturday 31st of January 2009 02:48:17 AM
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High air pollution in terms of particulate matter, SO2, NO2 etc has been observed from the rapidly urbanized cities. This is the most issuing problem for the environmental planners and scientists. The conventional approach of air quality status planning is generally achieved within four phases, namely monitoring, modeling, development and finally execution. Monitoring is achieved by integrative sampling; grab sampling, and passive sampling. But previous studies show that conventional approach to assess the pollution level are not efficient. Sin ....etc

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Title: Single electron tunneling SET transistor
Page Link: Single electron tunneling SET transistor -
Posted By: computer science topics
Created at: Tuesday 29th of June 2010 02:02:56 AM
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Single electron tunneling (SET) transistor

ABSTRACT
The chief problem that are faced by chip designers are regarding the size of the chip. According to Moores„¢s Law, the number of transistors on a chip will approximately double every 18 to 24 months. Moore\'s Law works largely through shrinking transistors-the circuits that carry electrical signals. By shrinking transistors, designers can squeeze more transistors into a chip. However, more transistors means more electricity and heat compressed into an even smaller space. F ....etc

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Title: ppt on study of 132 33 kv substation equipments
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Created at: Sunday 16th of September 2012 10:18:54 PM
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Title: Compact Current and Current Noise Models for Single-Electron Tunneling Transistors
Page Link: Compact Current and Current Noise Models for Single-Electron Tunneling Transistors -
Posted By: smart paper boy
Created at: Thursday 28th of July 2011 06:19:06 PM
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Abstract
This paper presents an analytic current model for capacitively coupled Single-Electron Tunneling Transistors (SETTs) that is based on a modified M-state steady-state master equation. Based on this current model we also derive a current noise model for SETT. To validate the proposed models we calculate their characteristics at different device parameters and different operation temperatures and compare them with the corresponding characteristics calculated by the full master equation method. The results indicate that the propo ....etc

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Title: Numerical modeling of tunneling
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Posted By: project report maker
Created at: Sunday 01st of August 2010 11:10:49 PM
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ABSTRACT:
The finite element program CRItical State Program (CRISP) has been used to model the New Austrian Tunneling Method (NATM) in London Clay. The non-linear behavior of the London Clay was modeled by a Strain Dependent Modified Cam Clay (SDMCC) model and the tunnel lining was modeled by constant and time-dependent classic models. The construction process was modeled in two and three dimensions by removing soil elements in sequence. The tunnel lining was either assumed wished-in-place or introduced after the excavation of each pa ....etc

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