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Title: Nanoelectronics single electron transistor
Page Link: Nanoelectronics single electron transistor -
Posted By: smart paper boy
Created at: Monday 18th of July 2011 12:18:30 PM
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ABSTRACT
The shotgun marriage of chemistry and engineering called “Nanotechnology” is ushering in the era of self-replicating machinery and self-assembling consumer goods made from raw atoms. Utilizing the well understood chemical properties of atoms & molecules, nanotechnology proposes the construction of novel molecular devices possessing extraordinary properties. The single electron transistor or SET is a new type of switching device that uses controlled electron tunneling to amplify current.
By using the “ ....etc

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Title: Single electron tunneling SET transistor
Page Link: Single electron tunneling SET transistor -
Posted By: computer science topics
Created at: Tuesday 29th of June 2010 02:02:56 AM
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Single electron tunneling (SET) transistor

ABSTRACT
The chief problem that are faced by chip designers are regarding the size of the chip. According to Moores„¢s Law, the number of transistors on a chip will approximately double every 18 to 24 months. Moore\'s Law works largely through shrinking transistors-the circuits that carry electrical signals. By shrinking transistors, designers can squeeze more transistors into a chip. However, more transistors means more electricity and heat compressed into an even smaller space. F ....etc

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Title: single electron devices and their applications ppt
Page Link: single electron devices and their applications ppt -
Posted By:
Created at: Tuesday 09th of April 2013 08:43:42 PM
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Single e device
Introduction
Theory
Operation
Advantge &disadvantage
Application ....etc

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Title: conventional tunneling full report
Page Link: conventional tunneling full report -
Posted By: seminar presentation
Created at: Tuesday 18th of May 2010 10:33:41 PM
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SEMINAR ON-
CONVENTIONAL TUNNELLING
PRESENTED BY-
Namrata M. Lolge (09CM16F)
M. Tech. 1st sem
NITK
TUNNELLING TECHNIQUES



DEFINITION

A definition of Conventional Tunnelling can be the construction of underground openings of any shape with a cyclic construction process of-
1. excavation, by using the drill and blast methods or mechanical excavators (except any full face TBM)
2. mucking
3. placement of the primary support elements such as-
-steel ribs or lattice gir ....etc

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Title: full length documentation on single electron transistor
Page Link: full length documentation on single electron transistor -
Posted By: kmpk474
Created at: Monday 31st of December 2012 03:18:31 PM
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Title: Numerical modeling of tunneling
Page Link: Numerical modeling of tunneling -
Posted By: project report maker
Created at: Sunday 01st of August 2010 11:10:49 PM
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ABSTRACT:
The finite element program CRItical State Program (CRISP) has been used to model the New Austrian Tunneling Method (NATM) in London Clay. The non-linear behavior of the London Clay was modeled by a Strain Dependent Modified Cam Clay (SDMCC) model and the tunnel lining was modeled by constant and time-dependent classic models. The construction process was modeled in two and three dimensions by removing soil elements in sequence. The tunnel lining was either assumed wished-in-place or introduced after the excavation of each pa ....etc

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Title: Single-Electron Transistor SET Process and Device Simulation Using SYSNOPSYS TCAD
Page Link: Single-Electron Transistor SET Process and Device Simulation Using SYSNOPSYS TCAD -
Posted By: smart paper boy
Created at: Wednesday 22nd of June 2011 05:36:18 PM
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Single-Electron Transistor (SET) Process and Device Simulation Using SYSNOPSYS TCAD Tools
Abstract:
Simulation of semiconductor device fabrication and operation is important to the design and manufacture of integrated circuits because it provides insights into complex phenomena that cannot obtained through experimentation or simple analytic models. Process and device simulation is commonly using for the design of new very large scale integration (VLSI) devices and processes. Simulation programs serves as exploratory tools in o ....etc

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Title: Nano electron transistor
Page Link: Nano electron transistor -
Posted By: seminar surveyer
Created at: Wednesday 22nd of December 2010 07:52:14 PM
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ABSTRACT
The shotgun marriage of chemistry and engineering called “Nanotechnology” is ushering in the era of self-replicating machinery and self-assembling consumer goods made from raw atoms. Utilizing the well understood chemical properties of atoms & molecules, nanotechnology proposes the construction of novel molecular devices possessing extraordinary properties. The single electron transistor or SET is a new type of switching device that uses controlled electron tunneling to a ....etc

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Title: Single-Electron Devices and Their Applications
Page Link: Single-Electron Devices and Their Applications -
Posted By: smart paper boy
Created at: Saturday 06th of August 2011 12:52:22 PM
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Abstract
The goal of this paper is to review in brief the basic physics of single-electron devices, as
well as their current and prospective applications. These devices, based on the controllable
transfer of single electrons between small conducting islands, have already enabled several
important scientific experiments. Several other applications of analog single-electron devices in
unique scientific instrumentation and metrology seem quite feasible. On the other hand, the
prospect of silicon transistors being replaced by single ....etc

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Title: Compact Current and Current Noise Models for Single-Electron Tunneling Transistors
Page Link: Compact Current and Current Noise Models for Single-Electron Tunneling Transistors -
Posted By: smart paper boy
Created at: Thursday 28th of July 2011 06:19:06 PM
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Abstract
This paper presents an analytic current model for capacitively coupled Single-Electron Tunneling Transistors (SETTs) that is based on a modified M-state steady-state master equation. Based on this current model we also derive a current noise model for SETT. To validate the proposed models we calculate their characteristics at different device parameters and different operation temperatures and compare them with the corresponding characteristics calculated by the full master equation method. The results indicate that the propo ....etc

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