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Title: Scanning Probe Microscopythe Scanning Tunneling Microscope
Page Link: Scanning Probe Microscopythe Scanning Tunneling Microscope -
Posted By: seminar class
Created at: Tuesday 22nd of March 2011 12:36:38 PM
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The best optical microscopes can see structures in the 200 – 400 nm range, at their limits of resolution.
The STM can “see” structures on the order of 0.1 nm —another SPM, the AFM—can distinguish things on the order of 100 nm .
Optical microscopes are “diffraction limited”—the wavelength range of visible light (400-750 nm) sets the size of the smallest thing that can be imaged: ~ 400 nm.
Scanning Probe Microscopes don’t use visible light—they depend on measuring intermolecular ....etc

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Title: conventional tunneling full report
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Posted By: seminar presentation
Created at: Tuesday 18th of May 2010 10:33:41 PM
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SEMINAR ON-
CONVENTIONAL TUNNELLING
PRESENTED BY-
Namrata M. Lolge (09CM16F)
M. Tech. 1st sem
NITK
TUNNELLING TECHNIQUES



DEFINITION

A definition of Conventional Tunnelling can be the construction of underground openings of any shape with a cyclic construction process of-
1. excavation, by using the drill and blast methods or mechanical excavators (except any full face TBM)
2. mucking
3. placement of the primary support elements such as-
-steel ribs or lattice gir ....etc

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Title: state and sequence diagram hospital management system report
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Created at: Wednesday 18th of February 2015 07:28:45 PM
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Hospital Management system includes registration of patients, storing their details into the system, and also computerized billing in the pharmacy, and labs.
Our software has the facility to give a unique id for every patient and stores the details of every patient and the staff automatically. It includes a search facility to know the current status of each room. User can search availability of a doctor and the details of a patient using the id.
The Hospital Management System can be entered using a username and password. It is accessible eith ....etc

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Title: Single electron tunneling SET transistor
Page Link: Single electron tunneling SET transistor -
Posted By: computer science topics
Created at: Tuesday 29th of June 2010 02:02:56 AM
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Single electron tunneling (SET) transistor

ABSTRACT
The chief problem that are faced by chip designers are regarding the size of the chip. According to Moores„¢s Law, the number of transistors on a chip will approximately double every 18 to 24 months. Moore\'s Law works largely through shrinking transistors-the circuits that carry electrical signals. By shrinking transistors, designers can squeeze more transistors into a chip. However, more transistors means more electricity and heat compressed into an even smaller space. F ....etc

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Title: Numerical modeling of tunneling
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Posted By: project report maker
Created at: Sunday 01st of August 2010 11:10:49 PM
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ABSTRACT:
The finite element program CRItical State Program (CRISP) has been used to model the New Austrian Tunneling Method (NATM) in London Clay. The non-linear behavior of the London Clay was modeled by a Strain Dependent Modified Cam Clay (SDMCC) model and the tunnel lining was modeled by constant and time-dependent classic models. The construction process was modeled in two and three dimensions by removing soil elements in sequence. The tunnel lining was either assumed wished-in-place or introduced after the excavation of each pa ....etc

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Title: Simulation and Design of NanocircuitsWith Resonant Tunneling Devices
Page Link: Simulation and Design of NanocircuitsWith Resonant Tunneling Devices -
Posted By: seminar class
Created at: Wednesday 04th of May 2011 06:11:40 PM
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Abstract
New nanotechnology-based devices are being researchedto replace CMOS devices in order to overcome CMOStechnology’s scaling limitations. However, many such devicesexhibit nonmonotonic I–V characteristics and uncertain propertieswhich lead to the negative differential resistance (NDR)problem and the chaotic performance. This paper proposes twonew circuit simulation approaches that can effectively simulatenanotechnology devices with uncertain input sources and negativedifferential resistance problem. A new tool called NanoSim ....etc

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Title: Seminar Report On PLAGIARISM DETECTION TECHNIQUES
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Posted By: Computer Science Clay
Created at: Sunday 14th of June 2009 04:11:40 AM
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Seminar Report
On
PLAGIARISM DETECTION TECHNIQUES
Submitted by
JAYA P A
In the partial fulfillment of requirements in degree of Master of Technology
(M Tech)
In
Computer and Information Science
DEPARTMENT OF COMPUTER SCIENCE
COCHIN UNIVERSITY OF SCIENCE AND TECHNOLOGY
KOCHI682022
2007 Page 2

ACKNOWLEDGEMENT
I would like to express my sincere thanks to Lord Almighty without whose blessings I
would not have completed my seminars. I would like to thank all those who have
contributed to the completion of the seminar ....etc

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Title: fins with different cross sections ppt for seminar
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Created at: Tuesday 14th of April 2015 05:28:00 AM
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Could you please share the presentation
with different cross sections ppt for seminar ?
I will appreciate that. ....etc

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Title: Safety Rules For Different Zones in Industrial Automation full report
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Posted By: project topics
Created at: Tuesday 06th of April 2010 11:42:36 PM
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Safety Rules For Different Zones in Industrial Automation

INTRODUCTION




Safety is a situation, whereby the risk is not
greater than the limit risk.

Risk is a combination of the probability and the
degree of the possible injury or damage to health
in a hazardous situation.

Safety is relative.

There is no such thing as 100% safety.



DIFFERENT SAFETY STANDARDS


ANSI:- American National Standards Institute.
IEC:- International Electrotechnical Co ....etc

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Title: Compact Current and Current Noise Models for Single-Electron Tunneling Transistors
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Posted By: smart paper boy
Created at: Thursday 28th of July 2011 06:19:06 PM
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Abstract
This paper presents an analytic current model for capacitively coupled Single-Electron Tunneling Transistors (SETTs) that is based on a modified M-state steady-state master equation. Based on this current model we also derive a current noise model for SETT. To validate the proposed models we calculate their characteristics at different device parameters and different operation temperatures and compare them with the corresponding characteristics calculated by the full master equation method. The results indicate that the propo ....etc

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