Single electron tunneling (SET) transistor

ABSTRACT
The chief problem that are faced by chip designers are regarding the size of the chip. According to Moores„¢s Law, the number of transistors on a chip will approximately double every 18 to 24 months. Moore\'s Law works largely through shrinking transistors-the circuits that carry electrical signals. By shrinking transistors, designers can squeeze more transistors into a chip. However, more transistors means more electricity and heat compressed into an even smaller space. F ....etc

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ABSTRACT
The shotgun marriage of chemistry and engineering called “Nanotechnology” is ushering in the era of self-replicating machinery and self-assembling consumer goods made from raw atoms. Utilizing the well understood chemical properties of atoms & molecules, nanotechnology proposes the construction of novel molecular devices possessing extraordinary properties. The single electron transistor or SET is a new type of switching device that uses controlled electron tunneling to a ....etc

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Abstract:
Graphene, which consists of just a single atomic layer of carbon atoms bound into crystal lattice, is the hottest new material system considered for applications in future electronics and sensors. The properties, which make graphene so desirable for future electronics, are its extremely high electrical and thermal conductivities. For any transistor to be useful for communications or information processing, the level of the electronic low-frequency noise (also referred to as 1/f or flicker noise) has to be r ....etc

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Abstract
The goal of this paper is to review in brief the basic physics of single-electron devices, as
well as their current and prospective applications. These devices, based on the controllable
transfer of single electrons between small conducting islands, have already enabled several
important scientific experiments. Several other applications of analog single-electron devices in
unique scientific instrumentation and metrology seem quite feasible. On the other hand, the
prospect of silicon transistors being replaced by single ....etc

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LAITH

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Single-Electron Transistor (SET) Process and Device Simulation Using SYSNOPSYS TCAD Tools
Abstract:
Simulation of semiconductor device fabrication and operation is important to the design and manufacture of integrated circuits because it provides insights into complex phenomena that cannot obtained through experimentation or simple analytic models. Process and device simulation is commonly using for the design of new very large scale integration (VLSI) devices and processes. Simulation programs serves as exploratory tools in o ....etc

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ABSTRACT
The shotgun marriage of chemistry and engineering called “Nanotechnology” is ushering in the era of self-replicating machinery and self-assembling consumer goods made from raw atoms. Utilizing the well understood chemical properties of atoms & molecules, nanotechnology proposes the construction of novel molecular devices possessing extraordinary properties. The single electron transistor or SET is a new type of switching device that uses controlled electron tunneling to amplify current.
By using the “ ....etc

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Single e device
Introduction
Theory
Operation
Advantge &disadvantage
Application ....etc

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Abstract
This paper presents an analytic current model for capacitively coupled Single-Electron Tunneling Transistors (SETTs) that is based on a modified M-state steady-state master equation. Based on this current model we also derive a current noise model for SETT. To validate the proposed models we calculate their characteristics at different device parameters and different operation temperatures and compare them with the corresponding characteristics calculated by the full master equation method. The results indicate that the propo ....etc

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