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Title: NANOFLUID TECHNOLOGY CURRENT STATUS AND FUTURE RESEARCH
Page Link: NANOFLUID TECHNOLOGY CURRENT STATUS AND FUTURE RESEARCH -
Posted By: seminar surveyer
Created at: Saturday 09th of October 2010 11:58:12 AM
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Prepared by:
Stephen U.-S. Choi



ABSTRACT

Downscaling or miniaturization has been a recent major trend in modern science and technology. Engineers now fabricate microscale devices such as microchannel heat exchangers, and micropumps that are the size of dust specks. Further major advances would be obtained if the coolant flowing in the microchannels were to contain nanoscale particles to enhance heat transfer. Nanofh.dd technology will thus be an emerging and exciting technology of the 21st century.
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Title: research paper and pdf on surge current protection using superconductors
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Title: idea needed for research in low power vlsi
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Title: ION CURRENT METHOD AS A HEAT SINK IN HIGH SPEED VLSI CHIPS
Page Link: ION CURRENT METHOD AS A HEAT SINK IN HIGH SPEED VLSI CHIPS -
Posted By: seminar details
Created at: Monday 04th of June 2012 05:49:19 PM
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ION CURRENT METHOD AS A HEAT SINK IN HIGH SPEED VLSI CHIPS




Introduction :

Today’s era of High Speed Technology involves in minorization of length of
transistor gates as well as increase in number of transistors per chip along with increase
in speed of execution. There are various technologies available for us for the high speed
execution of task.


Nanoscale Transistor Hotspots :

As silicon transistor channel lengths decrease below 100 n ....etc

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Title: vlsi m tech thesis on current conveyors
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Title: phd research topics in vlsi pdf
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Title: phd research topics in vlsi pdf
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Title: scholars research library archives of physics research impact factor 2012
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Title: Compact Current and Current Noise Models for Single-Electron Tunneling Transistors
Page Link: Compact Current and Current Noise Models for Single-Electron Tunneling Transistors -
Posted By: smart paper boy
Created at: Thursday 28th of July 2011 06:19:06 PM
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Abstract
This paper presents an analytic current model for capacitively coupled Single-Electron Tunneling Transistors (SETTs) that is based on a modified M-state steady-state master equation. Based on this current model we also derive a current noise model for SETT. To validate the proposed models we calculate their characteristics at different device parameters and different operation temperatures and compare them with the corresponding characteristics calculated by the full master equation method. The results indicate that the propo ....etc

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