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Title: nano technology in memory devices full report
Page Link: nano technology in memory devices full report -
Posted By: computer science technology
Created at: Monday 25th of January 2010 12:04:16 AM
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NANOTECHNOLOGY IN MEMORY DEVICES
ABSTRACT:
Nanotechnology deals with the study of nano sized particles. With the study of nano size particles, devices and composites, we will find ways to make stronger materials, detect diseases in the bloodstream, build extremely tiny machines, generate light and energy and purify water. The most fascinating application of Nanotechnology is that to make Nano sized switches to store information. The memory needs of the contemporary world have incr ....etc
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Title: IMPLEMENTATION OF SRAM USING MICRO WIND TOOL
Page Link: IMPLEMENTATION OF SRAM USING MICRO WIND TOOL -
Posted By: projectsofme
Created at: Monday 27th of September 2010 06:51:56 PM
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ABSTRACT
Data storage is a growing need in these days. With the advent of new technologies the concept of “more data in less space” is gaining importance day by day.
Most commonly used semiconductor memory is SRAM. Static Random Access Memory (SRAM) is a type of semiconductor memory where the word static indicates that unlike Dynamic RAM (DRAM) it does not need to be periodically refreshed, as SRAM is volatile in the conventional sense that data is eventu ....etc
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Title: Using Nonvolatile Static RAMs
Page Link: Using Nonvolatile Static RAMs -
Posted By: seminar paper
Created at: Wednesday 29th of February 2012 06:26:30 PM
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Using Nonvolatile Static RAMs
Abstract: Vast resources have been spent by the semiconductor industry to build high-speed nonvolatile random-access read/write memory. This effort was undertaken because NV SRAM offers advantages over other memory devices such as DRAM, SRAM, EEPROM, Shadow RAM, EPROM, and ROM. NV SRAM was developed to meet specific needs of the design engineer. This article describes applications requiring this type of memory and compares this ....etc
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Title: A 256-kb 65-nm Sub-threshold SRAM Design for Ultra-Low-Voltage Operation
Page Link: A 256-kb 65-nm Sub-threshold SRAM Design for Ultra-Low-Voltage Operation -
Posted By: seminar surveyer
Created at: Saturday 01st of January 2011 07:13:47 PM
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Benton Highsmith Calhoun, Member, IEEE, and Anantha P. Chandrakasan, Fellow, IEEE
Abstract—
Low-voltage operation for memories is attractive because of lower leakage power and active energy, but the challenges of SRAM design tend to increase at lower voltage. This paper explores the limits of low-voltage operation for traditional six–transistor (6 T) SRAM and proposes an alternative bitcell that functions to much lower voltages. Measurements confirm that a 256-kb 65-nm SRAM test chi ....etc
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Title: A Low-Power Delay Buffer Using Gated Driver Tree
Page Link: A Low-Power Delay Buffer Using Gated Driver Tree -
Posted By: seminar class
Created at: Friday 06th of May 2011 12:50:59 PM
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Abstract
This paper presents circuit design of a low-powerdelay buffer. The proposed delay buffer uses several new techniquesto reduce its power consumption. Since delay buffers areaccessed sequentially, it adopts a ring-counter addressing scheme.In the ring counter, double-edge-triggered (DET) flip-flops areutilized to reduce the operating frequency by half and the C-elementgated-clock strategy is proposed. A novel gated-clock-drivertree is then applied to further reduce the activity along the clockdistribution network. Moreover, the ....etc
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Title: Low power and high performance sram design using bank-based selective forward body bi
Page Link: Low power and high performance sram design using bank-based selective forward body bi -
Posted By: computer science crazy
Created at: Wednesday 21st of October 2009 11:07:27 PM
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ABSTRACT
Leakage power consumption is large fraction of the total power consumption in contemporary VLSI designs. Since memories occupy a large portion of the total area of many high-performance ICs, it is crucial to reduce the leakage energy of memories. This problem is particularly aggravated for memories implemented in the 45nm technology node, since these processes exhibit significantly higher leakage power. For these memories, leakage is a significant problem not only from a power point of view, but also from performance degradation st ....etc
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Title: IMPLEMENTATION OF SRAM USING MICRO WIND TOOL
Page Link: IMPLEMENTATION OF SRAM USING MICRO WIND TOOL -
Posted By: projectsofme
Created at: Monday 27th of September 2010 06:51:56 PM
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ABSTRACT
Data storage is a growing need in these days. With the advent of new technologies the concept of “more data in less space” is gaining importance day by day.
Most commonly used semiconductor memory is SRAM. Static Random Access Memory (SRAM) is a type of semiconductor memory where the word static indicates that unlike Dynamic RAM (DRAM) it does not need to be periodically refreshed, as SRAM is volatile in the conventional sense that data is eventu ....etc
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Title: ferroelectric ram seminars report
Page Link: ferroelectric ram seminars report -
Posted By: applied electronics
Created at: Tuesday 29th of December 2009 06:08:55 PM
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ABSTRACT
FRAM is a type of non-volatile read/write random access semiconductor memory. FRAM combines the advantages of SRAM writing is roughly as fast as reading, and EPROM non-volatility and in-circuit programmability. FRAM (ferroelectric RAM) is a random access memory that combines the fast read and write access of dynamic RAM (DRAM) - the most common kind of personal computer memory - with the ability to retain data when power is turned off (as do other n ....etc
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Title: monolithic 65-nm 144-Mbit SRAM
Page Link: monolithic 65-nm 144-Mbit SRAM -
Posted By: computer science crazy
Created at: Wednesday 21st of October 2009 11:09:11 PM
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Fastest Clock Speed up to 550 MHz and Total Data Rate up to 80
Gbps; Dramatically Expanding the Performance of Networking and Signal Processing
Applications Compared with 90-nm SRAMs, Cypresss 65-nm QDR and DDR SRAMs offer up to 50% lower standby and dynamic current consumption, enabling the new wave of green networking infrastructure applications. The QDRII+ and DDRII+ devices have
On-Die Termination (ODT), which improves signal integrity, reduces system cost,
and saves board space by eliminating external termination resistors. The 65-n ....etc
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Title: MULTISENSOR STRATEGIES TO SUPPORT BLIND PEOPLE-A CLEAR-PATH INDICATOR
Page Link: MULTISENSOR STRATEGIES TO SUPPORT BLIND PEOPLE-A CLEAR-PATH INDICATOR -
Posted By: computer science technology
Created at: Saturday 23rd of January 2010 03:48:46 AM
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MULTISENSOR STRATEGIES TO SUPPORT BLIND PEOPLE: A CLEAR-PATH INDICATOR
Abstract :
The development of electronic sensing devices for the visually impaired requires knowledge of the needs and abilities of this class of people. In this project we present a rough analysis that can be used to properly define the criteria to be adopted for the design of such devices. In particular, attention will be focused on clear-path indicators, highlighting their role in orientation and mobility tasks. A new device belonging to this class i ....etc
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Title: advantages and disadvantages of 6t sram
Page Link: advantages and disadvantages of 6t sram -
Posted By:
Created at: Monday 20th of June 2016 03:34:07 AM
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hi sir/mam
i vijji, interested to know about advantages and disadvantages of 6t sram cell ....etc
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Title: advantages and disadvantages of 6t sram
Page Link: advantages and disadvantages of 6t sram -
Posted By:
Created at: Monday 20th of June 2016 03:34:07 AM
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hi sir/mam
i vijji, interested to know about advantages and disadvantages of 6t sram cell ....etc
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Title: strataflash memory
Page Link: strataflash memory -
Posted By: electronics seminars
Created at: Sunday 20th of December 2009 02:41:52 PM
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Abstract:
The Intel StrataFlash memory technology represents a cost breakthrough for flash memory devices by enabling the storage of two bits of data in a single flash memory transistor. This seminar will discuss the evolution of the two bit/cell technology from conception to production ,The L18 flash memory device provides read-while-write and read-while-erase capability with density upgrades through 256-Mbit. This family of devices provides high performance at low voltage on a 16-bit data bus. Individually erasable memory blocks are sized fo ....etc
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Title: vlsi projects sram
Page Link: vlsi projects sram -
Posted By:
Created at: Sunday 14th of May 2017 07:59:16 PM
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hi iam mohammed i would like to get datails on vlsi projects sram ....etc
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Title: Plastic Memory
Page Link: Plastic Memory -
Posted By: project report tiger
Created at: Saturday 06th of February 2010 02:46:18 AM
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Plastic Memory
A conducting plastic has been used to create a new memory technology with the potential to store a megabit of data in a millimeter-square device - 10 times denser than current magnetic memories. The device should also be cheap and fast, but cannot be rewritten, so would only be suitable for permanent storage.
Imagine a scenario where the memory stored in your digital camera or personal digital assistant is partially based one of the most flexible materials made by man: plastic.
Scientists at HP Labs and Princeton Uni ....etc
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Title: Plastic Memory
Page Link: Plastic Memory -
Posted By: project report tiger
Created at: Saturday 06th of February 2010 02:46:18 AM
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Plastic Memory
A conducting plastic has been used to create a new memory technology with the potential to store a megabit of data in a millimeter-square device - 10 times denser than current magnetic memories. The device should also be cheap and fast, but cannot be rewritten, so would only be suitable for permanent storage.
Imagine a scenario where the memory stored in your digital camera or personal digital assistant is partially based one of the most flexible materials made by man: plastic.
Scientists at HP Labs and Princeton Uni ....etc
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