TTRAM is similar to conventional one-transistor, one-capacitor DRAM in concept, but eliminates the capacitor by relying on the floating body effect inherent in a silicon on insulator (SOI) manufacturing process. This effect causes capacitance to build up between the transistors and the underlying substrate, originally considered a nuisance but here used to replace a part outright. Since a transistor created using the SOI process is smaller than a capacitor, TTRAM offers somewhat higher densities than conventional DRAM. TTRAM is theoretically le ....etc

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INTRODUCTION

Even though the word DRAM has been quite common among us for many decades, the development in the field of DRAM was very slow. The storage medium reached the present state of semiconductor after a long scientific research. Once the semiconductor storage medium was well accepted by all, plans were put forward to integrate the logic circuits associated with the DRAM along with the DRAM itself. However, technological complexities and economic justification for such a complex integrated circuit are difficult hurdles to overcome. Al ....etc

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Resistive random-access memory (RRAM) is a new non-volatile memory type . Basic idea is that a dielectric, which is normally insulating can be made to conduct through a filament or conduction path formed after application of a sufficiently high voltage. The conduction path formation can arise from different mechanisms, including defects, metal migration, etc. Once the filament is formed, it may be reset (broken, resulting in high resistance) or set (re-formed, resulting in lower resistance) by an appropriately applied voltage. Different forms o ....etc

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please send the abstract and detailed report of the seminar topic ZRAM ....etc

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Fastest Clock Speed up to 550 MHz and Total Data Rate up to 80
Gbps; Dramatically Expanding the Performance of Networking and Signal Processing
Applications Compared with 90-nm SRAMs, Cypresss 65-nm QDR and DDR SRAMs offer up to 50% lower standby and dynamic current consumption, enabling the new wave of green networking infrastructure applications. The QDRII+ and DDRII+ devices have
On-Die Termination (ODT), which improves signal integrity, reduces system cost,
and saves board space by eliminating external termination resistors. The 65-n ....etc

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Zero-capacitor (Z-RAM) is a novel DRAM computer memory technology .Based on the floating body effect of silicon on insulator (SOI) process technology. Z-RAM has been licensed by Advanced Micro Devices for possible use in future microprocessors. This technology offers memory access speeds similar to the standard six-transistor SRAM cell used in cache memory but uses only a single transistor, therefore affording much higher packing densities.Z-RAM relies on the floating body effect, an artifact of the SOI process technology which places transisto ....etc

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This paper examines some aspects of the architecture of embedded DRAM (dynamic random access memory), its applications and its advantages over other conventional memory types.

Embedded DRAM (eDRAM) ? the concept of merging DRAM with logic on a single device ? has become increasingly popular, thanks to the growth of existing and emerging high bandwidth applications such as graphics processing, backbone and access router data communications systems and base stations for mobile phones.

A common requirement of all these designs is that they ....etc

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Thyristor RAM ('T-RAM) is a new type of DRAM computer memory invented and developed by T-RAM Semiconductor, which departs from the usual designs of memory cells, combining the strengths of the DRAM and SRAM: high speed and high volume. This technology exploits the electrical property known as negative differential resistance and is called thin capacitively-coupled thyristor used to create memory cells capable of very high packing densities. This memory is highly scalable and already has a storage density that is several times higher than found ....etc

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ABSTRACT

Leakage power consumption is large fraction of the total power consumption in contemporary VLSI designs. Since memories occupy a large portion of the total area of many high-performance ICs, it is crucial to reduce the leakage energy of memories. This problem is particularly aggravated for memories implemented in the 45nm technology node, since these processes exhibit significantly higher leakage power. For these memories, leakage is a significant problem not only from a power point of view, but also from performance degradation st ....etc

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EMBEDDED DRAM

This paper examines some aspects of the architecture of embedded DRAM (dynamic random access memory), its applications and its advantages over other conventional memory types. Embedded DRAM (eDRAM) ? the concept of merging DRAM with logic on a single device ? has become increasingly popular, thanks to the growth of existing and emerging high bandwidth applications such as graphics processing, backbone and access router data communications systems and base stations for mobile phones. A common requirement of all these designs is ....etc

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