Zero-capacitor (Z-RAM) is a novel DRAM computer memory technology .Based on the floating body effect of silicon on insulator (SOI) process technology. Z-RAM has been licensed by Advanced Micro Devices for possible use in future microprocessors. This technology offers memory access speeds similar to the standard six-transistor SRAM cell used in cache memory but uses only a single transistor, therefore affording much higher packing densities.Z-RAM relies on the floating body effect, an artifact of the SOI process technology which places transistors in isolated tubs (the transistor body voltages "float" with respect to the wafer substrate underneath the tubs). The floating body effect causes a variable capacitance to appear between the bottom of the tub and the underlying substrate

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Features :
• Zero Capacitor DRAM
• No capacitor in its memory cell
• Capacitance is stored in FB of SOI wafer itself
• Cell consists of a single transistor
Structure of memory cell:
Single MOS transistor
Merits
• High Data Retention time
#Due to large amount charge
• High Read/Write speed
#Approx 3nS
• Consumes very low Power
• Highly Scalable
#Size of Test chips
~1st 90nm
~Finally 35nm
• Low cost
#Reduces total Die Area
• Manufacturing is simple