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Title: free cell c airtime vouchers free cell c airtime cheat codes free cell c airtime hack
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Title: free cell c airtime vouchers free cell c airtime cheat codes free cell c airtime hack
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Title: IMPLEMENTATION OF SRAM USING MICRO WIND TOOL
Page Link: IMPLEMENTATION OF SRAM USING MICRO WIND TOOL -
Posted By: projectsofme
Created at: Monday 27th of September 2010 06:51:56 PM
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ABSTRACT


Data storage is a growing need in these days. With the advent of new technologies the concept of “more data in less space” is gaining importance day by day.

Most commonly used semiconductor memory is SRAM. Static Random Access Memory (SRAM) is a type of semiconductor memory where the word static indicates that unlike Dynamic RAM (DRAM) it does not need to be periodically refreshed, as SRAM is volatile in the conventional sense that data is eventu ....etc

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Title: A 256-kb 65-nm Sub-threshold SRAM Design for Ultra-Low-Voltage Operation
Page Link: A 256-kb 65-nm Sub-threshold SRAM Design for Ultra-Low-Voltage Operation -
Posted By: seminar surveyer
Created at: Saturday 01st of January 2011 07:13:47 PM
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Benton Highsmith Calhoun, Member, IEEE, and Anantha P. Chandrakasan, Fellow, IEEE

Abstract—
Low-voltage operation for memories is attractive because of lower leakage power and active energy, but the challenges of SRAM design tend to increase at lower voltage. This paper explores the limits of low-voltage operation for traditional six–transistor (6 T) SRAM and proposes an alternative bitcell that functions to much lower voltages. Measurements confirm that a 256-kb 65-nm SRAM test chi ....etc

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Title: advantages and disadvantages of 6t sram
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Title: Low power and high performance sram design using bank-based selective forward body bi
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Posted By: computer science crazy
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ABSTRACT

Leakage power consumption is large fraction of the total power consumption in contemporary VLSI designs. Since memories occupy a large portion of the total area of many high-performance ICs, it is crucial to reduce the leakage energy of memories. This problem is particularly aggravated for memories implemented in the 45nm technology node, since these processes exhibit significantly higher leakage power. For these memories, leakage is a significant problem not only from a power point of view, but also from performance degradation st ....etc

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Title: vlsi projects sram
Page Link: vlsi projects sram -
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Title: monolithic 65-nm 144-Mbit SRAM
Page Link: monolithic 65-nm 144-Mbit SRAM -
Posted By: computer science crazy
Created at: Wednesday 21st of October 2009 11:09:11 PM
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Fastest Clock Speed up to 550 MHz and Total Data Rate up to 80
Gbps; Dramatically Expanding the Performance of Networking and Signal Processing
Applications Compared with 90-nm SRAMs, Cypresss 65-nm QDR and DDR SRAMs offer up to 50% lower standby and dynamic current consumption, enabling the new wave of green networking infrastructure applications. The QDRII+ and DDRII+ devices have
On-Die Termination (ODT), which improves signal integrity, reduces system cost,
and saves board space by eliminating external termination resistors. The 65-n ....etc

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