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Title: SOI POWER DEVICES
Page Link: SOI POWER DEVICES -
Posted By: project topics
Created at: Tuesday 19th of July 2011 05:53:41 PM
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ABSTRACT

This paper provides an introduction to silicon-on-insulator (SOI) technology and the operating principles of high-voltage SOI devices, reviews the performance of the available SOI switching devices in comparison with standard silicon devices, discusses the reasoning behind the use of SOI technology in power applications and covers the most advanced novel power SOI devices proposed to date. The impact of SOI technology on power integrated circuits (PICs) and the problems associated with the integration of high-voltage and low- ....etc

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Title: Microphotonics for Space Application full report
Page Link: Microphotonics for Space Application full report -
Posted By: project reporter
Created at: Monday 01st of February 2010 03:25:34 PM
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CHAPTER 1
ABSTRACT
Micro photonics is the successor of electronics .It has many advantageous features for application in space through the combination of micro, nano integrated optics and fiber optic technologies .Based on current technical feasibility, potential impact on space systems and significant benefits; it is proposed that micro photonic satellite navigation systems can be developed with the target of a space demonstration flight .The proposed methodology is generic to the needs of all space craft; can provid ....etc

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Title: Hybrid Integration of Light Emitters and Detectors with SOI Based Micro-Opto-Electro
Page Link: Hybrid Integration of Light Emitters and Detectors with SOI Based Micro-Opto-Electro -
Posted By: project topics
Created at: Monday 26th of April 2010 12:04:40 PM
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Abstract


A multidisciplinary team of end users and suppliers has collaborated to develop a novel yet broadly enabling process for the design, fabrication and assembly of Micro-Opto-Electro-Mechanical Systems (MOEMS). A key goal is to overcome the shortcomings of the polysilicon layer used for fabricating optical components in a conventional surface micromachining process. These shortcomings include the controllability and uniformity of material stress that is a major cause of curvature and deformation in released microstructures. The appr ....etc

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Title: Silicon on insulator power devices full report
Page Link: Silicon on insulator power devices full report -
Posted By: computer science technology
Created at: Friday 22nd of January 2010 01:37:46 AM
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ABSTRACT
This paper provides an introduction to silicon-on-insulator (SOI) technology and the operating principles of high-voltage SOI devices, reviews the performance of the available SOI switching devices in comparison with standard silicon devices, discusses the reasoning behind the use of SOI technology in power applications and covers the most advanced novel power SOI devices proposed to date. The impact of SOI technology on power integrated circuits (PICs) and the problems associated with the integration of high-voltag ....etc

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Title: MOSFET - Metal Oxide Semiconductor Field Effect Transistors
Page Link: MOSFET - Metal Oxide Semiconductor Field Effect Transistors -
Posted By: seminar class
Created at: Monday 28th of March 2011 02:32:27 PM
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MOSFET
Metal Oxide Semiconductor Field Effect Transistors

 Different types of FETs
 Junction FET (JFET)
 Metal-Oxide-Semiconductor FET (MOSFET)
 Metal-Semiconductor FET (MESFET)
 Different types of FETs
 Junction FET (JFET)
 Different types of FETs
 Metal-Oxide-Semiconductor FET (MOSFET)
 Different types of FETs
 Metal-Semiconductor FET (MESFET)
Basic MOSFET (n-channel)
 The gate electrode is placed on top of a very thin insulating layer.
 There are a pair of s ....etc

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Title: MOSFET - Metal Oxide Semiconductor Field Effect Transistors
Page Link: MOSFET - Metal Oxide Semiconductor Field Effect Transistors -
Posted By: seminar class
Created at: Monday 28th of March 2011 02:32:27 PM
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MOSFET
Metal Oxide Semiconductor Field Effect Transistors

 Different types of FETs
 Junction FET (JFET)
 Metal-Oxide-Semiconductor FET (MOSFET)
 Metal-Semiconductor FET (MESFET)
 Different types of FETs
 Junction FET (JFET)
 Different types of FETs
 Metal-Oxide-Semiconductor FET (MOSFET)
 Different types of FETs
 Metal-Semiconductor FET (MESFET)
Basic MOSFET (n-channel)
 The gate electrode is placed on top of a very thin insulating layer.
 There are a pair of s ....etc

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Title: Ultralow-power CMOSSOI LSI Design for Future Mobile Systems
Page Link: Ultralow-power CMOSSOI LSI Design for Future Mobile Systems -
Posted By: seminar class
Created at: Thursday 05th of May 2011 06:45:13 PM
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Abstract
Ultralow-power CMOSlSOI circuit technology that usesfully-depleted SO1 and multi-threshold (MT) CMOS circuitsmakes it possible to lower the supply voltage to 0.5 V andreduce the power dissipation of LSIs to I - 10 mW withoutany speed loss. We overview the ultralow-power CMOSlSOIcircuit technology and some ultralow-voltage LSIs based onMTCMOSlSOI circuits.IntroductionThe use of mobile systems with communication functionshas expanded rapidly in recent years. Considering the comingera of ubiquitous or pervasive networking computi ....etc

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Title: FINFET FULL REPORT
Page Link: FINFET FULL REPORT -
Posted By: seminar class
Created at: Monday 09th of May 2011 06:22:40 PM
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INTRODUCTION
Since the fabrication of MOSFET, the minimum channel length has been shrinking continuously. The motivation behind this decrease has been an increasing interest in high speed devices and in very large scale integrated circuits. The sustained scaling of conventional bulk device requires innovations to circumvent the barriers of fundamental physics constraining the conventional MOSFET device structure. The limits most often cited are control of the density and location of dopants providing h ....etc

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Title: FinFET Technology
Page Link: FinFET Technology -
Posted By: computer science crazy
Created at: Sunday 21st of September 2008 01:12:57 PM
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Definition
Since the fabrication of MOSFET, the minimum channel length has been shrinking continuously. The motivation behind this decrease has been an increasing interest in high-speed devices and in very large-scale integrated circuits. The sustained scaling of conventional bulk device requires innovations to circumvent the barriers of fundamental physics constraining the conventional MOSFET device structure. The limits most often cited are control of the density and location of dopants providing high I on /I off ratio and finite sub thresho ....etc

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Title: FinFET Technology
Page Link: FinFET Technology -
Posted By: abhi51
Created at: Tuesday 15th of June 2010 11:16:55 PM
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Reference: http://studentbank.in/report-finfet-technology--505#ixzz0qw2h1wuc ....etc

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Title: Silicon on insulator technology SOI
Page Link: Silicon on insulator technology SOI -
Posted By: computer science crazy
Created at: Wednesday 21st of October 2009 11:16:37 PM
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Silicon on insulator technology (SOI) refers to the use of a layered silicon-insulator-silicon substrate in place of conventional silicon substrates in semiconductor manufacturing, especially microelectronics, to reduce parasitic device capacitance and thereby improving performance SOI-based devices differ from conventional silicon-built devices in that the silicon junction is above an electrical insulator, typically silicon dioxide or (less commonly) sapphire. The choice of insulator depends largely on intended application, with sapphire being ....etc

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Title: Silicon on insulator technology SOI
Page Link: Silicon on insulator technology SOI -
Posted By: computer science crazy
Created at: Wednesday 21st of October 2009 11:16:37 PM
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Silicon on insulator technology (SOI) refers to the use of a layered silicon-insulator-silicon substrate in place of conventional silicon substrates in semiconductor manufacturing, especially microelectronics, to reduce parasitic device capacitance and thereby improving performance SOI-based devices differ from conventional silicon-built devices in that the silicon junction is above an electrical insulator, typically silicon dioxide or (less commonly) sapphire. The choice of insulator depends largely on intended application, with sapphire being ....etc

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Title: Deep trench isolation for 600V SOI power devices
Page Link: Deep trench isolation for 600V SOI power devices -
Posted By: seminar class
Created at: Wednesday 04th of May 2011 05:23:50 PM
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Abstract
This paper describes the realization andcharacterisation of DTI (deep trench isolation)on thick (60μm) SOI (Silicon On Insulator)wafers for domestic and automotiveapplications . In this aim, DTI processoptimisation and adaptation permits to identifythe key parameters in breakdown voltagecapability. The role of different parts ofelaborated DTI was found to demonstrate thepossibility of good results in breakdownvoltage – up to 600V.
1. Introduction
BESOI (Bond and Etch SOI) substrates arecommonly used to reali ....etc

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Title: FinFET Technology
Page Link: FinFET Technology -
Posted By: Computer Science Clay
Created at: Sunday 01st of March 2009 04:12:25 PM
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FinFET Technology

Since the fabrication of MOSFET, the minimum channel length has been shrinking continuously. The motivation behind this decrease has been an increasing interest in high-speed devices and in very large-scale integrated circuits. The sustained scaling of conventional bulk device requires innovations to circumvent the barriers of fundamental physics constraining the conventional MOSFET device structure. The limits most often cited are control of the density and location of dopants pr ....etc

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Title: FinFET Technology
Page Link: FinFET Technology -
Posted By: computer science crazy
Created at: Sunday 21st of September 2008 01:12:57 PM
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Definition
Since the fabrication of MOSFET, the minimum channel length has been shrinking continuously. The motivation behind this decrease has been an increasing interest in high-speed devices and in very large-scale integrated circuits. The sustained scaling of conventional bulk device requires innovations to circumvent the barriers of fundamental physics constraining the conventional MOSFET device structure. The limits most often cited are control of the density and location of dopants providing high I on /I off ratio and finite sub thresho ....etc

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