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Title: Deep trench isolation for 600V SOI power devices
Page Link: Deep trench isolation for 600V SOI power devices -
Posted By: seminar class
Created at: Wednesday 04th of May 2011 05:23:50 PM
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Abstract
This paper describes the realization andcharacterisation of DTI (deep trench isolation)on thick (60μm) SOI (Silicon On Insulator)wafers for domestic and automotiveapplications . In this aim, DTI processoptimisation and adaptation permits to identifythe key parameters in breakdown voltagecapability. The role of different parts ofelaborated DTI was found to demonstrate thepossibility of good results in breakdownvoltage – up to 600V.
1. Introduction
BESOI (Bond and Etch SOI) substrates arecommonly used to reali ....etc

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Title: code for structure of finfet using silvaco
Page Link: code for structure of finfet using silvaco -
Posted By:
Created at: Friday 23rd of September 2016 04:38:38 PM
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Hi am Mohamed i would like to get details on code for structure of finfet using silvaco ..My friend Justin said code for structure of finfet using silvaco will be available here and now i am living at kerala and i last studied in the college/school NIT and now am doing mtech i need help to find the code for finfet. ....etc

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Title: code for structure of finfet using silvaco
Page Link: code for structure of finfet using silvaco -
Posted By:
Created at: Friday 21st of December 2012 08:43:51 AM
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Hi I would like to simulate self heat burn in in finfet..do you have the code pls? thx ....etc

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Title: SOI POWER DEVICES
Page Link: SOI POWER DEVICES -
Posted By: project topics
Created at: Tuesday 19th of July 2011 05:53:41 PM
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ABSTRACT

This paper provides an introduction to silicon-on-insulator (SOI) technology and the operating principles of high-voltage SOI devices, reviews the performance of the available SOI switching devices in comparison with standard silicon devices, discusses the reasoning behind the use of SOI technology in power applications and covers the most advanced novel power SOI devices proposed to date. The impact of SOI technology on power integrated circuits (PICs) and the problems associated with the integration of high-voltage and low- ....etc

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Title: silvaco code for nwfet
Page Link: silvaco code for nwfet -
Posted By:
Created at: Wednesday 28th of September 2016 03:28:27 PM
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Title: Ultralow-power CMOSSOI LSI Design for Future Mobile Systems
Page Link: Ultralow-power CMOSSOI LSI Design for Future Mobile Systems -
Posted By: seminar class
Created at: Thursday 05th of May 2011 06:45:13 PM
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Abstract
Ultralow-power CMOSlSOI circuit technology that usesfully-depleted SO1 and multi-threshold (MT) CMOS circuitsmakes it possible to lower the supply voltage to 0.5 V andreduce the power dissipation of LSIs to I - 10 mW withoutany speed loss. We overview the ultralow-power CMOSlSOIcircuit technology and some ultralow-voltage LSIs based onMTCMOSlSOI circuits.IntroductionThe use of mobile systems with communication functionshas expanded rapidly in recent years. Considering the comingera of ubiquitous or pervasive networking computi ....etc

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Title: Silicon on insulator technology SOI
Page Link: Silicon on insulator technology SOI -
Posted By: computer science crazy
Created at: Wednesday 21st of October 2009 11:16:37 PM
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Silicon on insulator technology (SOI) refers to the use of a layered silicon-insulator-silicon substrate in place of conventional silicon substrates in semiconductor manufacturing, especially microelectronics, to reduce parasitic device capacitance and thereby improving performance SOI-based devices differ from conventional silicon-built devices in that the silicon junction is above an electrical insulator, typically silicon dioxide or (less commonly) sapphire. The choice of insulator depends largely on intended application, with sapphire being ....etc

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Title: Hybrid Integration of Light Emitters and Detectors with SOI Based Micro-Opto-Electro
Page Link: Hybrid Integration of Light Emitters and Detectors with SOI Based Micro-Opto-Electro -
Posted By: project topics
Created at: Monday 26th of April 2010 12:04:40 PM
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Abstract


A multidisciplinary team of end users and suppliers has collaborated to develop a novel yet broadly enabling process for the design, fabrication and assembly of Micro-Opto-Electro-Mechanical Systems (MOEMS). A key goal is to overcome the shortcomings of the polysilicon layer used for fabricating optical components in a conventional surface micromachining process. These shortcomings include the controllability and uniformity of material stress that is a major cause of curvature and deformation in released microstructures. The appr ....etc

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Title: how to create cmos inverter on silvaco
Page Link: how to create cmos inverter on silvaco -
Posted By:
Created at: Thursday 07th of March 2013 05:25:24 AM
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please I want to ask how I can make CMOS inverter using silvaco
thanks a lot ....etc

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Title: FinFET Technology
Page Link: FinFET Technology -
Posted By: computer science crazy
Created at: Sunday 21st of September 2008 01:12:57 PM
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Definition
Since the fabrication of MOSFET, the minimum channel length has been shrinking continuously. The motivation behind this decrease has been an increasing interest in high-speed devices and in very large-scale integrated circuits. The sustained scaling of conventional bulk device requires innovations to circumvent the barriers of fundamental physics constraining the conventional MOSFET device structure. The limits most often cited are control of the density and location of dopants providing high I on /I off ratio and finite sub thresho ....etc

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