Hi
I am D.Sathya studying final year M.E.VLSI design .I am doing my project titled design and simulation of FinFET for nanoscale devices.If anyone have idea on this topic send me your ideas and valuable information to my email [email protected] would be helpful if you send a coding for NAND logic using FinFET with model parameters for FinFET. ....etc

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Hi I would like to simulate self heat burn in in finfet..do you have the code pls? thx ....etc

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INTRODUCTION
Since the fabrication of MOSFET, the minimum channel length has been shrinking continuously. The motivation behind this decrease has been an increasing interest in high speed devices and in very large scale integrated circuits. The sustained scaling of conventional bulk device requires innovations to circumvent the barriers of fundamental physics constraining the conventional MOSFET device structure. The limits most often cited are control of the density and location of dopants providing h ....etc

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SiGe HBT Technology


I. BANDGAP ENGINEERING IN SILICON
WE LIVE in a silicon world. Greater than 95% of
today’s $200 billion global semiconductor market
uses the semiconductor silicon (Si) to realize a host of integrated
circuits (IC’s) ranging from 233-MHz microprocessors
to 64-Mb dynamic random-access memory (DRAM) chips.
Indeed, it is the very existence of Si microelectronics which
has enabled the emergence of the Information Age which
is so profoundly r ....etc

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FinFET Technology

Since the fabrication of MOSFET, the minimum channel length has been shrinking continuously. The motivation behind this decrease has been an increasing interest in high-speed devices and in very large-scale integrated circuits. The sustained scaling of conventional bulk device requires innovations to circumvent the barriers of fundamental physics constraining the conventional MOSFET device structure. The limits most often cited are control of the density and location of dopants pr ....etc

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SiGe HBT Technology: A New Contender



II. SiGe HBT TECHNOLOGY
In order to provide a logical framework for this paper, the
experimental results presented will be largely from IBM’s
SiGe HBT technology . This technology is representative
of the state-of-the-art in 1998, is currently qualified and in
commercial production on 200-mm wafers in an advanced
CMOS fabrication facility, and is thus arguably the most
“real” SiGe HBT technology worldwide. The ....etc

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Hey pls can u provide me with a pdf or more details of this seminars. Am really interested in this topic.Pls help

Reference: http://studentbank.in/report-finfet-technology--505#ixzz0qw2h1wuc ....etc

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Definition
Since the fabrication of MOSFET, the minimum channel length has been shrinking continuously. The motivation behind this decrease has been an increasing interest in high-speed devices and in very large-scale integrated circuits. The sustained scaling of conventional bulk device requires innovations to circumvent the barriers of fundamental physics constraining the conventional MOSFET device structure. The limits most often cited are control of the density and location of dopants providing high I on /I off ratio and finite sub thresho ....etc

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Abstract
In this review, the primary FinFET framework is described, along with the reasons behind its release. The production actions are temporarily described. Lastly, some latest perform on FinFETs is provided, along with the excellent problems that individuals have been concentrating on.
Introduction
As gadgets get smaller further and further, the problems with traditional (planar) MOSFETs are improving. Market is currently at the 90nm node (ie. DRAM 50 percent steel message, which matches to checkpoint measures o ....etc

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The introduction of FinFET Technology has opened new chapters in Nano-technology. Simulations show that FinFET structure should be scalable down to 10 nm. Formation of ultra thin fin enables suppressed short channel effects.

It is an attractive successor to the single gate MOSFET by virtue of its superior electrostatic properties and comparative ease of manufacturability.

Since the fabrication of MOSFET, the minimum channel length has been shrinking continuously. The motivation behind this decrease has been an increasi ....etc

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