can u plz send me silicon memory ppt and documentation ....etc

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i wnt documentation of silicon memory plz
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An Integrated Silicon Carbide (SiC) Based Single Phase Rectifier with Power Factor Correction



I. INTRODUCTION
Power supplies are one of the most crucial building
blocks of a modern society, converting high-voltage AC
into low-voltage DC for use in electronic circuitry in office
equipment, telecommunication, and consumer electronics.
Over 2.5 billion AC/DC power supplies are currently in use
in the United States alone, about 6 to 10 billion are in use
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The rapid improvement in silicon technology has enables the electronic industry to progress steadily over the past 50 years.

It is this technological stride that make computers to shrink in cost and size .But a question still persists whether the present rate of progress will continue for the next 50 years. The essential ingredient to the progress had been the process of miniaturization.

The road to advances beyond a decade into the future has always been obscure and has stimulated many speculations as to where miniaturization must end. ....etc

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seminar report on silicon nanowire based solar cell
I must want it ....etc

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A Scalable SIC Device for DC/DC Converters in Future Hybrid Electric Vehicles


2)INTRODUCTION
This work is motivated by an industry wide interest to integrate SiC power devices in future automotive applications. The need to mount electric motor drives and other power converter electronics under the hood and as close to the motor as possible demands that the power electronics installed must either be capable of enduring the high under-hood temperatures or incor ....etc

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Strong Field-Effect in Graphene on SiC



Graphene, consisting of monolayer thick carbon, can be produced as an isolated layer (exfoliated graphite) or as an epitaxial layer on a SiC(0001) surface. We have used the latter method to produce graphene on 4H-SiC by heating at 1300°C in ultra-high vacuum with in-situ monitoring by electron diffraction. The graphene formation is performed at CMU, while transistor fabrication (with 1.5x0.5 mm2 channel area) is performed at Sarnoff Corp. A ....etc

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A SONOS memory cell is formed from a standard polysilicon NMOS transistor with the addition of a small sliver of silicon nitride inserted inside the transistor's gate oxide. The sliver of nitride is non-conductive but contains a large number of charge trapping sites able to hold an electrostatic charge. The nitride layer is electrically isolated from the surrounding transistor, although charges stored on the nitride directly affect the conductivity of the underlying transistor channel. The oxide/nitride sandwich typically consists of a 2 nm thi ....etc

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ABSTRACT
In this paper an attempt has been made to increase the reliability of engine using Al-SiCp composites as an alternative material for the engine valve guides. Aluminum matrix composites are finding increased application in automotive, aircraft and aerospace industries and hold the greatest promise for the future growth. The finite element analysis of the Al-SiCp composite engine valve guide was done using Ansys software. The temperature, principal stress and principal strain distribution over the entire surfa ....etc

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