The limits of pushing storage density to the atomic scale are explored with a memory that stores a bit by the presence or absence of one silicon atom. These atoms are positioned at lattice sites along self-assembled tracks with a pitch of five atom rows. The memory can be initialized and reformatted by controlled deposition of silicon. The writing process involves the transfer of Si atoms to the tip of a scanning tunnelling microscope. The limits of pushing storage density to the atomic scale are explored with a memory that stores a bit by the ....etc

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The effect of sub surface defects in surface roughness monitoring through ultrasonic flaw detector.
Objective
 To study the effect of sub surface defects in surface roughness monitoring through ultrasonic flaw detector.
 To study the sizing of defects.
Ultrasound Concepts
• All sound waves, whether audible or ultrasonic, are mechanical vibrations involving movement of the medium in which they are traveling. A sound wave may be transmitted through any material which behaves in an elastic manner.
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Demand for the research and development of the micro-manufacturing technologies is being fueled by the ever-increasing trend towards miniaturization over a wide spectrum of disciplines and industries. Recent technological advancement in the defense, biomedical, telecom-munications, consumer electronics have spearheaded the need for micromanufacturing technology, which is now beginning to find application in the automotive and aerospace industries due to the economic potential of the micro-factory paradigm. Micro-scale mechanical manufacturing p ....etc

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A SONOS memory cell is formed from a standard polysilicon NMOS transistor with the addition of a small sliver of silicon nitride inserted inside the transistor's gate oxide. The sliver of nitride is non-conductive but contains a large number of charge trapping sites able to hold an electrostatic charge. The nitride layer is electrically isolated from the surrounding transistor, although charges stored on the nitride directly affect the conductivity of the underlying transistor channel. The oxide/nitride sandwich typically consists of a 2 nm thi ....etc

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