MOSFET
Metal Oxide Semiconductor Field Effect Transistors
 Different types of FETs
 Junction FET (JFET)
 Metal-Oxide-Semiconductor FET (MOSFET)
 Metal-Semiconductor FET (MESFET)
 Different types of FETs
 Junction FET (JFET)
 Different types of FETs
 Metal-Oxide-Semiconductor FET (MOSFET)
 Different types of FETs
 Metal-Semiconductor FET (MESFET)
Basic MOSFET (n-channel)
 The gate electrode is placed on top of a very thin insulating layer.
 There are a pair of s ....etc

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sir i need ppt of modern surge arresters

i want ppt and abstract of modern surge arresters plz help me
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I need a power point presentation on the topic Modern surge arrestors. 
Thank You. ....etc

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MODERN ZINC OXIDE SURGE ARRESTER



Introduction
The most important matter in a
power system is how to handle a fault condition. In power
system networks we have to maintain the voltage, current
and other network parameters at a specified value .
If an abnormal condition is occurred we
must take precaution against the abnormality to protect
the succeeding elements connected to the network.There
are many modern technique to clear the over voltage
condit ....etc

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The aim of this study is to propose simple and reliable techniques to assess the condition of metal oxide arrester based on the dielectric response techniques. A number of modern electrical diagnostics for Metal Oxide Surge Arrester (MOSA) are discussed in this paper. The techniques included return voltage, decay voltage and polarisation/depolarisation current measurement. The single and multipulse current (8/20micros) was used to artificially degrade the MOSA. The before and after diagnostic ....etc

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Conductive Metal Oxide-CMOx Memory Technology

Introduction

It is a new non volatile memory technology, to be commercialised within two years.

It will take over from today’s NAND flash .

The memory effect of CMOx™ technology is based upon the movement of ionic charge carriers.


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A SONOS memory cell is formed from a standard polysilicon NMOS transistor with the addition of a small sliver of silicon nitride inserted inside the transistor's gate oxide. The sliver of nitride is non-conductive but contains a large number of charge trapping sites able to hold an electrostatic charge. The nitride layer is electrically isolated from the surrounding transistor, although charges stored on the nitride directly affect the conductivity of the underlying transistor channel. The oxide/nitride sandwich typically consists of a 2 nm thi ....etc

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Modern Surge Arrester plz
frwd fast ....etc

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Probabilistic Evaluation of Optimal Location of Surge Arresters on EHV and UHV Networks Due to Switching and Lightning Surges
Abstract
Switching surges are of primary importance in insulationcoordination of extremely high voltage and ultra-high voltagenetworks. However, in regions of high lightning activity or highground resistance insulation design, preferably, should be based onthe risk of failure caused by lightning and switching surges and theprobability of line outage, a combination of lightning and switchingflashover rates (SSFO ....etc

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