MOSFET
Metal Oxide Semiconductor Field Effect Transistors
 Different types of FETs
 Junction FET (JFET)
 Metal-Oxide-Semiconductor FET (MOSFET)
 Metal-Semiconductor FET (MESFET)
 Different types of FETs
 Junction FET (JFET)
 Different types of FETs
 Metal-Oxide-Semiconductor FET (MOSFET)
 Different types of FETs
 Metal-Semiconductor FET (MESFET)
Basic MOSFET (n-channel)
 The gate electrode is placed on top of a very thin insulating layer.
 There are a pair of s ....etc

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PPT ON the synthesis of SOLID OXIDE FUEL CELL electrolytes and the measurement of electrical properties of the solid oxide fuel cells ....etc

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APPLICATION OF NITROUS OXIDE IN AUTOMOBILES
INRODUCTION
In modern automobiles, nitrous oxide (often just nitrous or nitro in this context) is sometimes injected into the intake manifold (or just prior to the intake manifold) to increase power: even though the gas itself is not flammable, it delivers more oxygen than atmospheric air by breaking down at elevated temperatures, thus allowing the engine to burn more fuel and air. Additionally, since nitrous oxide is stored as a liquid ....etc

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I need ppt and seminar report on effect of nano copper oxide on mechanical and thermal property of materials ....etc

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nitrous oxide systems seminar references ....etc

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Conductive Metal Oxide-CMOx Memory Technology

Introduction

It is a new non volatile memory technology, to be commercialised within two years.

It will take over from today’s NAND flash .

The memory effect of CMOx™ technology is based upon the movement of ionic charge carriers.


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sir,:rolleyes: please send me abstract on application of nitrous oxide in automobile ....etc

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The aim of this study is to propose simple and reliable techniques to assess the condition of metal oxide arrester based on the dielectric response techniques. A number of modern electrical diagnostics for Metal Oxide Surge Arrester (MOSA) are discussed in this paper. The techniques included return voltage, decay voltage and polarisation/depolarisation current measurement. The single and multipulse current (8/20micros) was used to artificially degrade the MOSA. The before and after diagnostic ....etc

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A SONOS memory cell is formed from a standard polysilicon NMOS transistor with the addition of a small sliver of silicon nitride inserted inside the transistor's gate oxide. The sliver of nitride is non-conductive but contains a large number of charge trapping sites able to hold an electrostatic charge. The nitride layer is electrically isolated from the surrounding transistor, although charges stored on the nitride directly affect the conductivity of the underlying transistor channel. The oxide/nitride sandwich typically consists of a 2 nm thi ....etc

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