An IGCT is a special type of thyristor similar to a GTO. They can be turned on and off by a gate signal, have lower conduction loss as compared to GTOs, and withstand higher rates of voltage rise (dv/dt), such that no snubber is required for most applications.

The structure of an IGCT is very similar to a GTO thyristor. In an IGCT, the gate turn off current is greater than the anode current. This results in a complete elimination of minority carrier injection from the lower PN junction and faster turn off times. The main difference is a red ....etc

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I need integrated gate-commutated thyristor ppt. ....etc

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I NEED A PPT ON THIS TOPIC IITS URGENT.... REPLY ME QUICKLY
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send me the report about this topic. this is our main project. So send to me my email id is [email protected]
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presented by:
GAMI DHAVAL


Abstract—
Thyristor is common name given to the family of devices. It is very important member of power ele. Devices. It has large application now a day. This report gives introduction and explains characteristics of thyristor devices. It also contain basic introduction of power electronics. It contains basic information about power electronics devices like IGBT and Power MOSFET. At last it includes future applications of thyristor devices in different fields.
I. INTRODUCTION ....etc

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ABSTRACT
The Integrated Gate Commutated Thyristor (IGCT) combines the advantages of the hard driven GTO thyristor, including its dramatically improved turn- off performance, with technological breakthroughs at the device, gate-drive and application levels. Homogenous switching area of the IGCT up to the dynamic avalanche limits. Snubber circuits are no longer needed. Improved loss characteristics allow high frequency applications extending into the kHz range. A new ....etc

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The Integrated Gate Commutated Thyristor (IGCT) is a new high-power semiconductor device. IGCT is a special type of thyristor similar to a GTO. They can be turned on and off by a gate signal, have lower conduction loss as compared to GTOs, and withstand higher rates of voltage rise (dv/dt), such that no snubber is required for most applications.The structure of an IGCT is very similar to a GTO thyristor. In an IGCT, the gate turn off current is greater than the anode current. This results in a complete elimination of minority carrier injection ....etc

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INTRODUCTION

Boost converter is one of the most popular choices for high-quality rectification. The converter is supplied from a full-wave rectified line voltage and operated so that the input current follows the input voltage. The input current shaping can be achieved using a number of techniques. When the converter is operated at fixed frequency and fixed duty ratio in the discontinuous conduction mode (DCM), the low- frequency component of the input current is approxi ....etc

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Abstract-
In this paper, a new complementary gate driver for power metal-oxide semiconductor field-effect transistors and in sulated gate bipolar transistors is presented based on the use of a piezoelectric transformer (PT). This type of transformer has a high integration capability. Its design is based on a multilayer struc ture working in the second thickness resonance mode. A new de sign method has been used based on an analytical Mason model in order to optimize the efficiency, the available power at the trans former secon ....etc

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Name– Study of basic gates.
Aim – to study the working of basic gates like AND gate, OR gate and NOT gate.
Apparatus – IC 7404, IC 7408, IC 7432, circuit board, power supply +5V DC, LED, connecting wires, soldering iron, cutter etc.


Procedure –
1) You are given IC 7404, IC 7408 and IC 7432. Identify the ICs by reading their numbers and details from above given pin configurations and specifications.
2) Solder the circuit as shown in the circuit diagram.
3) Connec ....etc

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