ABSTRACT
The Integrated Gate Commutated Thyristor (IGCT) combines the advantages of the hard driven GTO thyristor, including its dramatically improved turn- off performance, with technological breakthroughs at the device, gate-drive and application levels. Homogenous switching area of the IGCT up to the dynamic avalanche limits. Snubber circuits are no longer needed. Improved loss characteristics allow high frequency applications extending into the kHz range. A new ....etc

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Name– Study of basic gates.
Aim – to study the working of basic gates like AND gate, OR gate and NOT gate.
Apparatus – IC 7404, IC 7408, IC 7432, circuit board, power supply +5V DC, LED, connecting wires, soldering iron, cutter etc.


Procedure –
1) You are given IC 7404, IC 7408 and IC 7432. Identify the ICs by reading their numbers and details from above given pin configurations and specifications.
2) Solder the circuit as shown in the circuit diagram.
3) Connec ....etc

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pls tell me some information about this project..... ....etc

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I need integrated gate-commutated thyristor ppt. ....etc

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Hai, please give me the details of this topic. ....etc

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The Integrated Gate Commutated Thyristor (IGCT) is a new high-power semiconductor device. IGCT is a special type of thyristor similar to a GTO. They can be turned on and off by a gate signal, have lower conduction loss as compared to GTOs, and withstand higher rates of voltage rise (dv/dt), such that no snubber is required for most applications.The structure of an IGCT is very similar to a GTO thyristor. In an IGCT, the gate turn off current is greater than the anode current. This results in a complete elimination of minority carrier injection ....etc

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Solar powered automatic vehicle accident information ....etc

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Please send me the ppt of igct.While reading the report of igct i cann't find the circuits,waweform that described in report.so please send them immediately. ....etc

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An IGCT is a special type of thyristor similar to a GTO. They can be turned on and off by a gate signal, have lower conduction loss as compared to GTOs, and withstand higher rates of voltage rise (dv/dt), such that no snubber is required for most applications.

The structure of an IGCT is very similar to a GTO thyristor. In an IGCT, the gate turn off current is greater than the anode current. This results in a complete elimination of minority carrier injection from the lower PN junction and faster turn off times. The main difference is a red ....etc

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I NEED A PPT ON THIS TOPIC IITS URGENT.... REPLY ME QUICKLY
....etc

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