i wanna noe more abt integrated gate commutated thyristorz....plz do help me.... ....etc

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I NEED A PPT ON THIS TOPIC IITS URGENT.... REPLY ME QUICKLY
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igct

Thyristor technology is inherently superior to transistor for blocking voltage values above 2.5kV, plasma distributions equal to those of diodes offering the best trade-off between the on-state and blocking voltages. Until the introduction of newer power switches, the only serious contenders for high-power transportation systems and other applications were the GTO (thyristor), with its cumbersome snubbers, and the IGBT (transistor), with its inherently high losses. Until now, adding the gate t ....etc

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I need integrated gate-commutated thyristor ppt. ....etc

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what are the VI characteristics of igct? ....etc

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Introduction

Thyristor technology is inherently superior to transistor for blocking voltage values above 2.5kV, plasma distributions equal to those of diodes offering the best trade-off between the on-state and blocking voltages. Until the introduction of newer power switches, the only serious contenders for high-power transportation systems and other applications were the GTO (thyristor), with its cumbersome snubbers, and the IGBT (transistor), with its inherently high losses. Until now, adding the gate turn-off feature has resulted in GTO ....etc

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Please send me the ppt of igct.While reading the report of igct i cann't find the circuits,waweform that described in report.so please send them immediately. ....etc

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ABSTRACT
The Integrated Gate Commutated Thyristor (IGCT) combines the advantages of the hard driven GTO thyristor, including its dramatically improved turn- off performance, with technological breakthroughs at the device, gate-drive and application levels. Homogenous switching area of the IGCT up to the dynamic avalanche limits. Snubber circuits are no longer needed. Improved loss characteristics allow high frequency applications extending into the kHz range. A new ....etc

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Introduction

Thyristor technology is inherently superior to transistor for blocking voltage values above 2.5kV, plasma distributions equal to those of diodes offering the best trade-off between the on-state and blocking voltages. Until the introduction of newer power switches, the only serious contenders for high-power transportation systems and other applications were the GTO (thyristor), with its cumbersome snubbers, and the IGBT (transistor), with its inherently high losses. Until now, adding the gate turn-off feature has resulted in GTO ....etc

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An IGCT is a special type of thyristor similar to a GTO. They can be turned on and off by a gate signal, have lower conduction loss as compared to GTOs, and withstand higher rates of voltage rise (dv/dt), such that no snubber is required for most applications.

The structure of an IGCT is very similar to a GTO thyristor. In an IGCT, the gate turn off current is greater than the anode current. This results in a complete elimination of minority carrier injection from the lower PN junction and faster turn off times. The main difference is a red ....etc

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