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Title: ac performance of nanoelectronics
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Posted By: electronics seminars
Created at: Thursday 12th of November 2009 02:12:27 PM
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ABSTRACT

The phenomenological predictions for the cutoff frequency of carbon nanotube transistors and the predictions of the effects of parasitic capacitances on AC nanotube transistor performance are presented. The influence of quantum capacitance, kinetic inductance, and ballistic transport on the high-frequency properties of nanotube transistors is analyzed. The challenges of impedance matching for ac nano-electronics in general, and how integrated nanosystems can solve this challenge, are presented.
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Title: AC Performance Of Nanoelectronics
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Posted By: Computer Science Clay
Created at: Sunday 01st of March 2009 04:12:03 PM
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AC Performance Of Nanoelectronics

Nano electronic devices fall into two classes: tunnel devices and ballistic transport devices. In Tunnel devices single electron effects occur if the tunnel resistance is larger than h/e = 25 K §Ù. In Ballistic devices with cross sectional dimensions in the range of quantum mechanical wavelength of electrons, the resistance is of order h/e = 25 K §Ù. This high resistance may seem to restrict the operational speed of nano electron ....etc

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Title: ac performance of nanoelectronics abstract
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Title: nanoelectronics ppt
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Posted By: rakshakaramu
Created at: Sunday 23rd of January 2011 12:15:44 PM
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Title: AC Performance Of Nanoelectronics
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Posted By: computer science crazy
Created at: Sunday 21st of September 2008 02:04:42 PM
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Definition
Nano electronic devices fall into two classes: tunnel devices and ballistic transport devices. In Tunnel devices single electron effects occur if the tunnel resistance is larger than h/e = 25 K ?U. In Ballistic devices with cross sectional dimensions in the range of quantum mechanical wavelength of electrons, the resistance is of order h/e = 25 K ?U. This high resistance may seem to restrict the operational speed of nano electronics in general. However the capacitance values and drain source spacing are typically small which gives r ....etc

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Title: AC Performance Of Nanoelectronics
Page Link: AC Performance Of Nanoelectronics -
Posted By: computer science crazy
Created at: Monday 22nd of September 2008 01:15:24 PM
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Definition
Nano electronic devices fall into two classes: tunnel devices and ballistic transport devices. In Tunnel devices single electron effects occur if the tunnel resistance is larger than h/e = 25 K ?U. In Ballistic devices with cross sectional dimensions in the range of quantum mechanical wavelength of electrons, the resistance is of order h/e = 25 K ?U. This high resistance may seem to restrict the operational speed of nano electronics in general. However the capacitance values and drain source spacing are typically small which gives r ....etc

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Title: Nanoelectronics
Page Link: Nanoelectronics -
Posted By: computer science crazy
Created at: Tuesday 24th of February 2009 02:43:48 AM
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Nanoelectronics refer to the use of nanotechnology on electronic components, especially transistors. Although the term nanotechnology is generally defined as utilizing technology less than 100nm in size, nanoelectronics often refer to transistor devices that are so small that inter-atomic interactions and quantum mechanical properties need to be studied extensively. As a result, present transistors (such as CMOS90 from TSMC or Pentium 4 Processors from Intel) do not fall under this category, even though these devices are manufactured under 90nm ....etc

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Title: AC Performance Of Nanoelectronics
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Posted By: neerajgoyalkota
Created at: Monday 12th of April 2010 02:05:06 PM
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