ac performance of microelectonics ....etc

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ABSTRACT

The phenomenological predictions for the cutoff frequency of carbon nanotube transistors and the predictions of the effects of parasitic capacitances on AC nanotube transistor performance are presented. The influence of quantum capacitance, kinetic inductance, and ballistic transport on the high-frequency properties of nanotube transistors is analyzed. The challenges of impedance matching for ac nano-electronics in general, and how integrated nanosystems can solve this challenge, are presented.
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hello!
im rutuja satpute... student of electrical engg...
i kindly need the abstract on ac performance of nanoelectronics....
i wud be pleased if u cud provide me with it....

i will surely like if i will get the abstract of av=c performance of nanoelectronics only ....etc

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Nanoelectronics refer to the use of nanotechnology on electronic components, especially transistors. Although the term nanotechnology is generally defined as utilizing technology less than 100nm in size, nanoelectronics often refer to transistor devices that are so small that inter-atomic interactions and quantum mechanical properties need to be studied extensively. As a result, present transistors (such as CMOS90 from TSMC or Pentium 4 Processors from Intel) do not fall under this category, even though these devices are manufactured under 90nm ....etc

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Definition
Nano electronic devices fall into two classes: tunnel devices and ballistic transport devices. In Tunnel devices single electron effects occur if the tunnel resistance is larger than h/e = 25 K ?U. In Ballistic devices with cross sectional dimensions in the range of quantum mechanical wavelength of electrons, the resistance is of order h/e = 25 K ?U. This high resistance may seem to restrict the operational speed of nano electronics in general. However the capacitance values and drain source spacing are typically small which gives r ....etc

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AC Performance Of Nanoelectronics

Nano electronic devices fall into two classes: tunnel devices and ballistic transport devices. In Tunnel devices single electron effects occur if the tunnel resistance is larger than h/e = 25 K §Ù. In Ballistic devices with cross sectional dimensions in the range of quantum mechanical wavelength of electrons, the resistance is of order h/e = 25 K §Ù. This high resistance may seem to restrict the operational speed of nano electron ....etc

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A hybrid approach to nanoelectronics


G F Cerofolini1,3, G Arena1, C M Camalleri1, C Galati1, S Reina1, L Renna1 and D Mascolo2
1 STMicroelectronics, Stradale Primosole 50, 95100 Catania CT, Italy
2 STMicroelectronics, Via Remo De Feo 1, 80022 Arzano NA, Italy
3 Address for correspondence: STMicroelectronics, 20041 Agrate MI, Italy



abstraction
. The definition of features on the nanometre length scale (NLS) is impossible via conventional lithography, but can be done using extreme ultraviolet, synchr ....etc

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Hi I am Rakshaka Ramu,
Nanoelectronics
I want some information related to nanoelectronics,
and need ppt of nanoelectronics,
I am aware of nanoelectronics but not in much details.
So requesting you to send information in nanoelectronics..
Hope a responds from your side.

Thanking you,

....etc

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ABSTRACT
The shotgun marriage of chemistry and engineering called “Nanotechnology” is ushering in the era of self-replicating machinery and self-assembling consumer goods made from raw atoms. Utilizing the well understood chemical properties of atoms & molecules, nanotechnology proposes the construction of novel molecular devices possessing extraordinary properties. The single electron transistor or SET is a new type of switching device that uses controlled electron tunneling to amplify current.
By using the “ ....etc

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Definition
Nano electronic devices fall into two classes: tunnel devices and ballistic transport devices. In Tunnel devices single electron effects occur if the tunnel resistance is larger than h/e = 25 K ?U. In Ballistic devices with cross sectional dimensions in the range of quantum mechanical wavelength of electrons, the resistance is of order h/e = 25 K ?U. This high resistance may seem to restrict the operational speed of nano electronics in general. However the capacitance values and drain source spacing are typically small which gives r ....etc

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