A hybrid approach to nanoelectronics


G F Cerofolini1,3, G Arena1, C M Camalleri1, C Galati1, S Reina1, L Renna1 and D Mascolo2
1 STMicroelectronics, Stradale Primosole 50, 95100 Catania CT, Italy
2 STMicroelectronics, Via Remo De Feo 1, 80022 Arzano NA, Italy
3 Address for correspondence: STMicroelectronics, 20041 Agrate MI, Italy



abstraction
. The definition of features on the nanometre length scale (NLS) is impossible via conventional lithography, but can be done using extreme ultraviolet, synchr ....etc

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ac performance of microelectonics ....etc

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Definition
Nano electronic devices fall into two classes: tunnel devices and ballistic transport devices. In Tunnel devices single electron effects occur if the tunnel resistance is larger than h/e = 25 K ?U. In Ballistic devices with cross sectional dimensions in the range of quantum mechanical wavelength of electrons, the resistance is of order h/e = 25 K ?U. This high resistance may seem to restrict the operational speed of nano electronics in general. However the capacitance values and drain source spacing are typically small which gives r ....etc

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Definition
Nano electronic devices fall into two classes: tunnel devices and ballistic transport devices. In Tunnel devices single electron effects occur if the tunnel resistance is larger than h/e = 25 K ?U. In Ballistic devices with cross sectional dimensions in the range of quantum mechanical wavelength of electrons, the resistance is of order h/e = 25 K ?U. This high resistance may seem to restrict the operational speed of nano electronics in general. However the capacitance values and drain source spacing are typically small which gives r ....etc

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AC Performance Of Nanoelectronics

Nano electronic devices fall into two classes: tunnel devices and ballistic transport devices. In Tunnel devices single electron effects occur if the tunnel resistance is larger than h/e = 25 K §Ù. In Ballistic devices with cross sectional dimensions in the range of quantum mechanical wavelength of electrons, the resistance is of order h/e = 25 K §Ù. This high resistance may seem to restrict the operational speed of nano electron ....etc

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Nanoelectronics refer to the use of nanotechnology on electronic components, especially transistors. Although the term nanotechnology is generally defined as utilizing technology less than 100nm in size, nanoelectronics often refer to transistor devices that are so small that inter-atomic interactions and quantum mechanical properties need to be studied extensively. As a result, present transistors (such as CMOS90 from TSMC or Pentium 4 Processors from Intel) do not fall under this category, even though these devices are manufactured under 90nm ....etc

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ABSTRACT

The phenomenological predictions for the cutoff frequency of carbon nanotube transistors and the predictions of the effects of parasitic capacitances on AC nanotube transistor performance are presented. The influence of quantum capacitance, kinetic inductance, and ballistic transport on the high-frequency properties of nanotube transistors is analyzed. The challenges of impedance matching for ac nano-electronics in general, and how integrated nanosystems can solve this challenge, are presented.
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