.
ABSTRACT
Magnetic RAM (MRAM) is a new memory technology with access and cost characteristics comparable to those of conventional dynamic RAM (DRAM) and the non-volatility of magnetic media such as disk. That is MRAM retains its memory even after removing power from the device. Such a non-volatile memory has important military applications for missiles and satellites. Clearly such a device could also have important commercial applications if the non-volatility were accomplished without impacting other properties of the m ....etc

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.
ABSTRACT
Magnetic RAM (MRAM) is a new memory technology with access and cost characteristics comparable to those of conventional dynamic RAM (DRAM) and the non-volatility of magnetic media such as disk. That is MRAM retains its memory even after removing power from the device. Such a non-volatile memory has important military applications for missiles and satellites. Clearly such a device could also have important commercial applications if the non-volatility were accomplished without impacting other properties of the m ....etc

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It is a step towards a new breed of computer chips that couple memory with information processing. Such chips retain data when computer is turned off, eliminating the time-consuming process of booting up information from hard drive to processor. If we can make semiconductor based magnetic memories when we turn on computer it would be like a TV set-all information will be there with no need for reloading the operating system. All spintronic computers eliminate the need for parallel processing. Computing could be accelerated and customized with r ....etc

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MRAM



introduction

Non-volatile
◦ Information is saved even when there is no
power
Immediate boot up
◦ No need to wait for your computer to boot up
MRAM, SRAM and DRAM
◦ MRAM is potentially capable of replacing both
DRAM, SRAM and many advantages over
technology currently used in electronic devices

DRAM
◦ Advantages: cheap
◦ Disadvantages: Comparatively slow and loses
data when power is off
SRAM
◦ ....etc

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1. INTRODUCTION

Impediments to main memory performance have traditionally been due to the divergence in processor versus memory speed and the pin bandwidth limitations of modern packaging technologies. End-user demands are forcing drastic changes in the applications, which use semiconductor memory products, and new applications are emerging with even more unique requirements. Some of these demands include a reduction in power, board space and cost, as well as increased density and performance. Flash memory has been the ans ....etc

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Spintronics can be fairly new term for you but the concept isn't so very exotic .This technological discipline aim to exploit subtle and mind bending esoteric quantum property of electron to develop a new generation of electronics devices. The ability to exploit spin in semiconductor promise a new logical devices as spin transistor etc with enhanced functionality higher speed and reduction power conception and might have a spark revolution in semiconductor industry. so far the problem of injecting electron with controlled spin direction has hel ....etc

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mRAM applicatons recently, mRAM related block diagrams ....etc

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Definition

The high-tech industry has spent decades creating computer systems with ever mounting degrees of complexity to solve a wide variety of business problems. Ironically, complexity itself has become part of the problem. As networks and distributed systems grow and change, they can become increasingly hampered by system deployment failures, hardware and software issues, not to mention human error. Such scenarios in turn require further human intervention to enhance the performance and capacity of IT components. This drives up the overa ....etc

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SEMINAR REPORT
On
Giant Magnetoresistance Effect
Submitted in partial fulfillment for the award of the degree of
Master of Technology
in
Computer and Information Science
By
TOMSY PAUL
Department of Computer Science
Cochin University of Science and Technology
Cochin-22, Kerala
2008Page 2

Giant Magnetoresistance Effect
Department of Computer Science CUSAT
2
COCHIN UNIVERSITY OF SCIENCE AND TECHNOLOGY
DEPARTMENT OF COMPUTER SCIENCE
CERTIFICATE
This is to certify that the report entitled
Giant Magnetoresistance Effect
is ....etc

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MRAM, the new breed of semiconductor memory uses magnetic properties to store data. This new kind of chip will compete with other established forms of semiconductor memories such as Flash memory and random access memory (RAM). Most engineers believe, that the technology called magnetoresistive random-access memory(MRAM) could reduce the cost and power consumption of electronics for cell phones, music players, laptops and servers. The feature, that makes MRAM an alluring alternative to other forms of semiconductor memories, is the way it stores ....etc

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INTRODUCTION
All materials have an inherent magnetic character arising from the movements of their electrons. Since dynamic electric fields induce a magnetic field, the orbit of electrons, which creates atomic current loops, results in magnetic fields. An external magnetic field will cause these atomic magnetic fields to align so that they oppose the external field. This is the only magnetic effect that arises from electron pairs. If a material exhibits only this effect in an applied field it is known as a diamagneti ....etc

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INTRODUCTION

In 1984 Drs. Arthur Pohm and Jim Daughton, both employed at that time by Honeywell, conceived of a new class of magnetoresistance memory devices which offered promise for high density, random access, nonvolatile memory. In 1989 Dr. Daughton left Honeywell to form Nonvolatile Electronics, Inc. having entered into a license agreement allowing him to sublicense Honeywell MRAM technology for commercial applications. Dr. Pohm, Dr. Daughton, and others at NVE continued to improve basic MRAM techno ....etc

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I Need thermally assisted switching mram based fpga logic circuit report. ....etc

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looking for documentation of mram and pdf and ppt and explain about each and every component ....etc

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Definition
Ovonyx is developing a microelectronics memory technology called Ovonic Unified Memory (OUM). This technology is originally developed by Mr. Stanford Ovshinsky and exclusively licensed from Energy Conversion Devices (ECD) Inc. Ovonic unified memory -- its name is derived from ''Ovshinsky'' and ''electronic''. OVM is also known as phase change memory because it uses unique thin-film phase change material to store information economically and with excellent solid-state memory properties. It would be the replacement of conventional mem ....etc

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MRAM, the new breed of semiconductor memory uses magnetic properties to store data. This new kind of chip will compete with other established forms of semiconductor memories such as Flash memory and random access memory (RAM). Most engineers believe, that the technology called magnetoresistive random-access memory(MRAM) could reduce the cost and power consumption of electronics for cell phones, music players, laptops and servers. The feature, that makes MRAM an alluring alternative to other forms of semiconductor memories, is the way it stores ....etc

[:=Read Full Message Here=:]

.
ABSTRACT
Magnetic RAM (MRAM) is a new memory technology with access and cost characteristics comparable to those of conventional dynamic RAM (DRAM) and the non-volatility of magnetic media such as disk. That is MRAM retains its memory even after removing power from the device. Such a non-volatile memory has important military applications for missiles and satellites. Clearly such a device could also have important commercial applications if the non-volatility were accomplished without impacting other properties of the m ....etc

[:=Read Full Message Here=:]

Definition
Ovonyx is developing a microelectronics memory technology called Ovonic Unified Memory (OUM). This technology is originally developed by Mr. Stanford Ovshinsky and exclusively licensed from Energy Conversion Devices (ECD) Inc. Ovonic unified memory -- its name is derived from ''Ovshinsky'' and ''electronic''. OVM is also known as phase change memory because it uses unique thin-film phase change material to store information economically and with excellent solid-state memory properties. It would be the replacement of conventional mem ....etc

[:=Read Full Message Here=:]