You hit the power button on your television and it instantly comes to life. But do the same thing with your computer and you have to wait a few minutes while it goes through its boot up sequence. Why canâ„¢t we have a computer that turns on as instantly as a television or radio? IBM, in cooperation with Infineon, is promising to launch a new technology in the next few years that will eliminate the boot-up process. Magnetic random access memory (MRAM) has the potential to store more data, access that data faster and use less power than curr ....etc

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Thyristor RAM ('T-RAM) is a new type of DRAM computer memory invented and developed by T-RAM Semiconductor, which departs from the usual designs of memory cells, combining the strengths of the DRAM and SRAM: high speed and high volume. This technology exploits the electrical property known as negative differential resistance and is called thin capacitively-coupled thyristor used to create memory cells capable of very high packing densities. This memory is highly scalable and already has a storage density that is several times higher than found ....etc

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ABSTRACT
Magnetic RAM (MRAM) is a new memory technology with access and cost characteristics comparable to those of conventional dynamic RAM (DRAM) and the non-volatility of magnetic media such as disk. That is MRAM retains its memory even after removing power from the device. Such a non-volatile memory has important military applications for missiles and satellites. Clearly such a device could also have important commercial applications if the non-volatility were accomplished without impacting other properties of the m ....etc

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Zero-capacitor (Z-RAM) is a novel DRAM computer memory technology .Based on the floating body effect of silicon on insulator (SOI) process technology. Z-RAM has been licensed by Advanced Micro Devices for possible use in future microprocessors. This technology offers memory access speeds similar to the standard six-transistor SRAM cell used in cache memory but uses only a single transistor, therefore affording much higher packing densities.Z-RAM relies on the floating body effect, an artifact of the SOI process technology which places transisto ....etc

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In 1984 Drs. Arthur Pohm and Jim Daughton, both employed at that time by Honeywell, conceived of a new class of magnetoresistance memory devices which offered promise for high density, random access, nonvolatile memory. In 1989 Dr. Daughton left Honeywell to form Nonvolatile Electronics, Inc. having entered into a license agreement allowing him to sublicense Honeywell MRAM technology for commercial applications. Dr. Pohm, Dr. Daughton, and others at NVE continued to improve basic MRAM technology, and innovated new techniques which take advantag ....etc

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Magnetic Random Access Memories (M-RAM) : A truly universal memory


Introduction
Recent developments in the physics of spin electronics (see Inset) have enabled the
emergence of a new class of non-volatile memories, Magnetic Random Access Memories
(MRAM). MRAM combine on paper all the virtues of current silicon-based memories: speed,
density, non-volatility, low power consumption, radiation hardness and endurance (see Table
1). The first target for MRAM is ....etc

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PLEASE GIVE COMPLETE DETAILS OF MAGNETIC RAM AS APLLIED TODAY,HOW IS IT EMERGING??,,HOW IS IT USED TODAY?? WHAT ARE FUTURE ENHANCEMENTS? PLEASE ,MAIL THE DETAILS AS SOON AS POSSIBLE.... ....etc

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