ABSTRACT
BiCMOS technology is a combination of Bipolar and CMOS technology. CMOS technology offers less power dissipation, smaller noise margins, and higher packing density. Bipolar technology, on the other hand, ensures high switching and I/O speed and good noise performance. It follows that BiCMOS technology accomplishes both - improved speed over CMOS and lower power dissipation than bipolar technology. The main drawback of BiCMOS technology is the higher costs due to the added process complexity. Impurity profiles have ....etc

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INTRODUCTION

Electronics without silicon is unbelievable, but it will come true with the evolution of Diamond or Carbon chip. Now a day we are using silicon for the manufacturing of Electronic Chip's. It has many disadvantages when it is used in power electronic applications, such as bulk in size, slow operating speed etc. Carbon, Silicon and Germanium are belonging to the same group in the periodic table. They have four valance electrons in their outer shell. Pure Silicon and Germanium are semiconductors in normal temperature. So in the ear ....etc

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PLASTIC CHIPS

INTRODUCTION
Scientists at Cambridge university UK have come up with the technology and finding to make ultra cheap micro chip from plastic.
The men behind plastic logic -
Hermaun Hauses - Director of Amadeus capitol partners
Richard Friend - scientist Cambridge university

Silicon chips are expensive to make
Polythiophenes and ologithiophenes

CONTENTS
INTRODUCTION
PLASTIC TECHNOLOGY
o FET TRANSISTORS
o ORGANIC TFT
o DOPING
MANUFACTURING
o CONVENTIONAL MANUFAC ....etc

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This article is presented by:
DHARAM VIR
Master of Technology in Electrical Engineering
YMCA INSTITUTE OF ENGINEERING, FARIDABAD
JULY 2009


Analytical Analysis of Double Implanted MOSFET for High Breakdown & Low Power Dissipation using Graded Profile on 6H-SiC Wafer

Objectives of Thesis:

The main objectives of this work were as follows:
Analysis of Double Implanted MOSFET on 6H SiC wafer using uniform doping profile.
Deter ....etc

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ABSTRACT
Fermi-FET transistor technology can lead to significant improvement in circuit performance, layout density, power requirements, and manufacturing cost with only a moderate alteration of traditional MOSFET manufacturing technology. This technology makes use of a subtle optimization of traditional buried channel technology to overcome the known shortcomings of buried channel while maintaining large improvements in channel mobility. This technology merges the mobility and low drain current leakage of BCA ....etc

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ABSTRACT
Transparent electronics is an emerging science and technology field focused on producing ‘invisible’ electronic circuitry and opto-electronic devices. Applications include consumer electronics, new energy sources, and transportation; for example, automobile windshields could transmit visual information to the driver. Glass in almost any setting could also double as an electronic device, possibly improving security systems or offering transparent displays. In a similar vein, windows could be used ....etc

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Abstract
In this review, the primary FinFET framework is described, along with the reasons behind its release. The production actions are temporarily described. Lastly, some latest perform on FinFETs is provided, along with the excellent problems that individuals have been concentrating on.
Introduction
As gadgets get smaller further and further, the problems with traditional (planar) MOSFETs are improving. Market is currently at the 90nm node (ie. DRAM 50 percent steel message, which matches to checkpoint measures o ....etc

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ABSTRACT
This paper provides an introduction to silicon-on-insulator (SOI) technology and the operating principles of high-voltage SOI devices, reviews the performance of the available SOI switching devices in comparison with standard silicon devices, discusses the reasoning behind the use of SOI technology in power applications and covers the most advanced novel power SOI devices proposed to date. The impact of SOI technology on power integrated circuits (PICs) and the problems associated with the integration of high-voltag ....etc

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Doping of semiconductors



n doping This involves substituting Si by neighboring elements that contribute excess electrons. For example, small amounts of P or As can substitute Si.
Since P/As have 5 valence electrons, they behave like Si plus an extra electron. This extra electron contributes to electrical conductivity, and with a sufficiently
large number of such dopant atoms, the material can displays metallic conductivity. With smaller amounts, one has extrinsic ....etc

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ARTICLE IN PRESS
+Model
JALCOM-17427; No.of Pages4
Journal of Alloys and Compounds xxx (2008) xxx“xxx
Mg
1.96-1.96x
Zn
1.96x
GeO
4
:Mn
0.04
phosphors for electroluminescent
display applications
G. Anoop, K. Mini Krishna, M.K. Jayaraj
*
Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kochi 682022, Kerala, India
Received 27 June 2007; received in revised form 7 January 2008; accepted 9 January 2008
Abstract
Orthorhombic magnesium germenate (Mg
2
GeO
4
) doped with ....etc

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(1)give me all the information about solar cell & dopping in english or gujarati.
(2)suggest me the e-book about solar cell & dopping in english or gujarati.
(3)which materials is used in dopping recently? ....etc

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