BASIC HVDC AND CONVERTER OPERATION



Why HVDC rather than HVAC?
Long distances make HVDC cheaper
Improved page link stability
Fault isolation
Asynchronous link


Inverter operation ( = 140º)
Firing is delayed so much that the entire area enclosed between the voltage waveform and the zero line is of opposite polarity.

The equation written in terms of  is still correct:

Vd=Vdio -0.766-Id. Xc+Er
2
Vd=-Vdio x 0.8609
H ....etc

[:=Read Full Message Here=:]

INTRODUCTION
Since the fabrication of MOSFET, the minimum channel length has been shrinking continuously. The motivation behind this decrease has been an increasing interest in high speed devices and in very large scale integrated circuits. The sustained scaling of conventional bulk device requires innovations to circumvent the barriers of fundamental physics constraining the conventional MOSFET device structure. The limits most often cited are control of the density and location of dopants providing h ....etc

[:=Read Full Message Here=:]

Hey pls can u provide me with a pdf or more details of this seminars. Am really interested in this topic.Pls help

Reference: http://studentbank.in/report-finfet-technology--505#ixzz0qw2h1wuc ....etc

[:=Read Full Message Here=:]

Hi I would like to simulate self heat burn in in finfet..do you have the code pls? thx ....etc

[:=Read Full Message Here=:]

Hi
I am D.Sathya studying final year M.E.VLSI design .I am doing my project titled design and simulation of FinFET for nanoscale devices.If anyone have idea on this topic send me your ideas and valuable information to my email [email protected] would be helpful if you send a coding for NAND logic using FinFET with model parameters for FinFET. ....etc

[:=Read Full Message Here=:]

Abstract
In this review, the primary FinFET framework is described, along with the reasons behind its release. The production actions are temporarily described. Lastly, some latest perform on FinFETs is provided, along with the excellent problems that individuals have been concentrating on.
Introduction
As gadgets get smaller further and further, the problems with traditional (planar) MOSFETs are improving. Market is currently at the 90nm node (ie. DRAM 50 percent steel message, which matches to checkpoint measures o ....etc

[:=Read Full Message Here=:]

Definition
Since the fabrication of MOSFET, the minimum channel length has been shrinking continuously. The motivation behind this decrease has been an increasing interest in high-speed devices and in very large-scale integrated circuits. The sustained scaling of conventional bulk device requires innovations to circumvent the barriers of fundamental physics constraining the conventional MOSFET device structure. The limits most often cited are control of the density and location of dopants providing high I on /I off ratio and finite sub thresho ....etc

[:=Read Full Message Here=:]

FinFET Technology

Since the fabrication of MOSFET, the minimum channel length has been shrinking continuously. The motivation behind this decrease has been an increasing interest in high-speed devices and in very large-scale integrated circuits. The sustained scaling of conventional bulk device requires innovations to circumvent the barriers of fundamental physics constraining the conventional MOSFET device structure. The limits most often cited are control of the density and location of dopants pr ....etc

[:=Read Full Message Here=:]

BASIC INSTRUMENTATION MEASURING DEVICES AND BASIC PID CONTROL


INTRODUCTION
Instrumentation is the art of measuring the value of some plant parameter,
pressure, flow, level or temperature to name a few and supplying a signal
that is proportional to the measured parameter. The output signals are
standard signal and can then be processed by other equipment to provide
indication, alarms or automatic control. There are a number of standard
signals; however, t ....etc

[:=Read Full Message Here=:]

The introduction of FinFET Technology has opened new chapters in Nano-technology. Simulations show that FinFET structure should be scalable down to 10 nm. Formation of ultra thin fin enables suppressed short channel effects.

It is an attractive successor to the single gate MOSFET by virtue of its superior electrostatic properties and comparative ease of manufacturability.

Since the fabrication of MOSFET, the minimum channel length has been shrinking continuously. The motivation behind this decrease has been an increasi ....etc

[:=Read Full Message Here=:]