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Title: finfet technology wiki
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Created at: Saturday 31st of August 2013 09:55:53 AM
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Title: Project idea for Design and Simulation of FinFET
Page Link: Project idea for Design and Simulation of FinFET -
Posted By: sathyaece
Created at: Saturday 15th of January 2011 07:40:14 PM
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Hi
I am D.Sathya studying final year M.E.VLSI design .I am doing my project titled design and simulation of FinFET for nanoscale devices.If anyone have idea on this topic send me your ideas and valuable information to my email [email protected] would be helpful if you send a coding for NAND logic using FinFET with model parameters for FinFET. ....etc

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Title: FinFET Technology
Page Link: FinFET Technology -
Posted By: Computer Science Clay
Created at: Sunday 01st of March 2009 04:12:25 PM
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FinFET Technology

Since the fabrication of MOSFET, the minimum channel length has been shrinking continuously. The motivation behind this decrease has been an increasing interest in high-speed devices and in very large-scale integrated circuits. The sustained scaling of conventional bulk device requires innovations to circumvent the barriers of fundamental physics constraining the conventional MOSFET device structure. The limits most often cited are control of the density and location of dopants pr ....etc

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Title: finfet technology seminars report
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Posted By: computer science crazy
Created at: Thursday 19th of July 2012 11:11:39 PM
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Abstract
In this review, the primary FinFET framework is described, along with the reasons behind its release. The production actions are temporarily described. Lastly, some latest perform on FinFETs is provided, along with the excellent problems that individuals have been concentrating on.
Introduction
As gadgets get smaller further and further, the problems with traditional (planar) MOSFETs are improving. Market is currently at the 90nm node (ie. DRAM 50 percent steel message, which matches to checkpoint measures o ....etc

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Title: FinFET Technology
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Posted By: abhi51
Created at: Tuesday 15th of June 2010 11:16:55 PM
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Title: FinFET Technology
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Posted By: computer science crazy
Created at: Monday 22nd of September 2008 02:53:35 AM
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The introduction of FinFET Technology has opened new chapters in Nano-technology. Simulations show that FinFET structure should be scalable down to 10 nm. Formation of ultra thin fin enables suppressed short channel effects.

It is an attractive successor to the single gate MOSFET by virtue of its superior electrostatic properties and comparative ease of manufacturability.

Since the fabrication of MOSFET, the minimum channel length has been shrinking continuously. The motivation behind this decrease has been an increasi ....etc

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Title: finfet technology seminars report pdf
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Created at: Thursday 19th of June 2014 08:08:24 PM
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Title: finfet technology seminars report pdf
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Created at: Wednesday 05th of November 2014 08:39:56 PM
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Title: FINFET FULL REPORT
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Posted By: seminar class
Created at: Monday 09th of May 2011 06:22:40 PM
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INTRODUCTION
Since the fabrication of MOSFET, the minimum channel length has been shrinking continuously. The motivation behind this decrease has been an increasing interest in high speed devices and in very large scale integrated circuits. The sustained scaling of conventional bulk device requires innovations to circumvent the barriers of fundamental physics constraining the conventional MOSFET device structure. The limits most often cited are control of the density and location of dopants providing h ....etc

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Title: FinFET Technology
Page Link: FinFET Technology -
Posted By: computer science crazy
Created at: Sunday 21st of September 2008 01:12:57 PM
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Definition
Since the fabrication of MOSFET, the minimum channel length has been shrinking continuously. The motivation behind this decrease has been an increasing interest in high-speed devices and in very large-scale integrated circuits. The sustained scaling of conventional bulk device requires innovations to circumvent the barriers of fundamental physics constraining the conventional MOSFET device structure. The limits most often cited are control of the density and location of dopants providing high I on /I off ratio and finite sub thresho ....etc

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