Differences between single effect evaporator and multiple effect evaporator ....etc

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PLEASE PROVIDE US THE CKT. DIAG OF GAS LEAKAGE DETECTION AND AUTO ON/OFF SYSTEM.......URGENTLY ....etc

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This article describes the effect of tower displacement of two parallel transmission lines on the magnetic field distribution. Here, two parallel lines with the same working voltage and having the same span and in which the use of artificial tower displacement is made is modeled.Parallel transmission lines with different span lengths and different voltages produce tower displacements naturally and this is also modeled. Additionally, the effects like the spacing between the parallel lines, phase conductors arrangements and the transmission line ....etc

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presented by:
Bibi Mohanan


CARBON DIOXIDE LASER
A test target is vaporized and bursts into flame upon irradiation by a high power continuous wave carbon dioxide laser emitting tens of kilowatts of infrared light
Introduction
 Operates in middlle infrared region(10.6 μm &9.4 μm )
 Operates on rotational –vibrational transitions
 Both cw & pulsed laser output
 Cw power greater than 100kw
 Pulsed energies of 10 kJ
 Physical arrangement :a gas filled tube between a pair of mir ....etc

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Prospect of P3HT Field effect transistors



Ohmic contact

Metal semiconductor contacts having a linear I-V characteristic in both biasing directions .
Ideally, Showing minimum contact resistance.
There will be no depletion width.
Ideally, Built-in potential is zero.
Electron flow between metal and semiconductor, Potential barrier is small and easily overcome by the application of small voltage.

Conclusion

P3HT FET hole mobility is stil ....etc

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Presented By:
Marcin Janicki*, Marcin Daniel, Michal Szermer, Andrzej Napieralski

Abstract
The proper design and simulation of modern electronic microsystems oriented towards environment monitoring requires accurate models of various ambient sensors. In particular, this paper presents a comprehensive model of an ion sensitive field effect transistor (ISFET). The model can be employed straightforwardly for simulations at device, circuit or system level. First, the model was validated with electrical measurements a ....etc

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ISFET is an ion-sensitive field-effect transistor used to measure ion concentrations in solution and is a new type of miniaturised semiconductor chemical sensor. It is based on the structure of the metal-insulator-semi-conductor field-effect transistor (MISFET) in which a metal gate is replaced by an ion selective membrane, an electrolyte and a reference electrode here when the ion concentration (such as pH) changes, the current through the transistor will change accordingly. Here, the solution is used as the gate electrode. A voltage between s ....etc

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MOSFET
Metal Oxide Semiconductor Field Effect Transistors
 Different types of FETs
 Junction FET (JFET)
 Metal-Oxide-Semiconductor FET (MOSFET)
 Metal-Semiconductor FET (MESFET)
 Different types of FETs
 Junction FET (JFET)
 Different types of FETs
 Metal-Oxide-Semiconductor FET (MOSFET)
 Different types of FETs
 Metal-Semiconductor FET (MESFET)
Basic MOSFET (n-channel)
 The gate electrode is placed on top of a very thin insulating layer.
 There are a pair of s ....etc

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PROPERTY ENHANCEMENT OF SPHEROIDAL GRAPHITE CAST IRON BY HEAT TREATMENT
By
RANJAN MITTAL & SUNIT NANDA
NIT ROURKELA

Abstract
Spherodized graphite iron or SG iron is another name for the common ductile iron. The peculiarity of this kind of iron is that it contains more than 3% carbon and has graphite present in compact, spherical shapes. higher strength and toughness is resulted as a result of the compact spheroids hampering the continuity of the structure. The SG iron has mechanical pr ....etc

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Strong Field-Effect in Graphene on SiC



Graphene, consisting of monolayer thick carbon, can be produced as an isolated layer (exfoliated graphite) or as an epitaxial layer on a SiC(0001) surface. We have used the latter method to produce graphene on 4H-SiC by heating at 1300°C in ultra-high vacuum with in-situ monitoring by electron diffraction. The graphene formation is performed at CMU, while transistor fabrication (with 1.5x0.5 mm2 channel area) is performed at Sarnoff Corp. A ....etc

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