Prospect of P3HT Field effect transistors

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Ohmic contact

Metal semiconductor contacts having a linear I-V characteristic in both biasing directions .
Ideally, Showing minimum contact resistance.
There will be no depletion width.
Ideally, Built-in potential is zero.
Electron flow between metal and semiconductor, Potential barrier is small and easily overcome by the application of small voltage.

Conclusion

P3HT FET hole mobility is still 0.1 cm2 /V s, Compare with Inorganic semiconductor (Si, GaAS) it’s mobility is very low(Electron hole mobility is 1450 cm2/V s.
To increase the mobility we need to make it as a crystal (Chemistry research work).