14-11-2009, 05:13 PM
INTEREST in nitride-based localized trapping storage Flash memory cells has revived for 10-min-cell operation, which can double the memory density. Besides, they also show better scalability since charges are stored in nitride traps rather than a poly silicon floating-gate in conventional Flash memory cells. Nitride storage memories do not have floating-gate-induced drain turn-on and coupling issues, which are believed to be the scaling limitations of conventional floating-gate memories .Various operation schemes were proposed based on the nitride-storage cell structure. A novel PHINES cell is proposed based on the nitride storage cell structure
