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Title: Ion sensitive eld effect transistor modelling for multidomain simulation purposes
Page Link: Ion sensitive eld effect transistor modelling for multidomain simulation purposes -
Posted By: project report maker
Created at: Monday 02nd of August 2010 02:57:17 AM
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Title: Ion sensitive eld effect transistor modelling for multidomain simulation purposes
Page Link: Ion sensitive eld effect transistor modelling for multidomain simulation purposes -
Posted By: project report maker
Created at: Monday 02nd of August 2010 02:57:17 AM
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Presented By:
Marcin Janicki*, Marcin Daniel, Michal Szermer, Andrzej Napieralski

Abstract
The proper design and simulation of modern electronic microsystems oriented towards environment monitoring requires accurate models of various ambient sensors. In particular, this paper presents a comprehensive model of an ion sensitive field effect transistor (ISFET). The model can be employed straightforwardly for simulations at device, circuit or system level. First, the model was validated with electrical measurements a ....etc

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Title: Ion sensitive eld effect transistor modelling for multidomain simulation purposes
Page Link: Ion sensitive eld effect transistor modelling for multidomain simulation purposes -
Posted By: project report maker
Created at: Monday 02nd of August 2010 02:57:17 AM
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Presented By:
Marcin Janicki*, Marcin Daniel, Michal Szermer, Andrzej Napieralski

Abstract
The proper design and simulation of modern electronic microsystems oriented towards environment monitoring requires accurate models of various ambient sensors. In particular, this paper presents a comprehensive model of an ion sensitive field effect transistor (ISFET). The model can be employed straightforwardly for simulations at device, circuit or system level. First, the model was validated with electrical measurements a ....etc

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