ABSTRACT
Ferroelectric memory is a new type of semiconductor memory, which exhibit short programming time, low power consumption and nonvolatile memory, making highly suitable for application like contact less smart card, digital cameras which demands many memory write operations.
A ferroelectric memory technology consists of a complementary metal-oxide-semiconductor (CMOS) technology with added layers on top for ferroelectric capacitors. A ferroelectric memory cell has at least one ferroelectric capacitor ....etc

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INTRODUCTION

Before the 1950â„¢s, ferromagnetic cores were the only type of random-access, nonvolatile memories available. A core memory is a regular array of tiny magnetic cores that can be magnetized in one of two opposite directions, making it possible to store binary data in the form of a magnetic field. The success of the core memory was due to a simple architecture that resulted in a relatively dense array of cells. This approach was emulated in the semiconductor memories of today (DRAMâ„¢s, EEPROMâ„¢s, and FRAMâ„¢s). ....etc

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Ferroelectric random accessmemory (FRAM) is a non-volatilememory. FRAM has significanttechnical advantages that enablesolutions not possible with othermemory technology. The underlyingmolecular structure of anFRAM memory cell is shown inFigure 1. When an electric fieldis applied across the ferroelctriccrystal, the central atom moves inthe direction of the applied field.The polarity of this atom remainswhen the electric field is removed,preserving the data withinthe memory without the need forperiodic refresh. Understandingthe ....etc

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I AM SHALU 4TH YEAR EC STUDENT. I NEED FULL REPORT AND PRESENTATION OF FERROELECTRIC MEMORY. KINDLY SEND ME THE ABOVE . ....etc

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Thyristor RAM ('T-RAM) is a new type of DRAM computer memory invented and developed by T-RAM Semiconductor, which departs from the usual designs of memory cells, combining the strengths of the DRAM and SRAM: high speed and high volume. This technology exploits the electrical property known as negative differential resistance and is called thin capacitively-coupled thyristor used to create memory cells capable of very high packing densities. This memory is highly scalable and already has a storage density that is several times higher than found ....etc

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Ferroelectric RAM

abstract

Ferroelectric RAM (FeRAM or FRAM) is a random access memory similar in construction to DRAM but uses a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile memory technologies that offer the same functionality as Flash memory. FeRAM advantages over Flash include: lower power usage, faster write performance and a much greater maximum number (exceeding 1016 for 3.3 V devices) of write-erase ....etc

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ABSTRACT

FRAM is a type of non-volatile read/write random access semiconductor memory. FRAM combines the advantages of SRAM writing is roughly as fast as reading, and EPROM non-volatility and in-circuit programmability. FRAM (ferroelectric RAM) is a random access memory that combines the fast read and write access of dynamic RAM (DRAM) - the most common kind of personal computer memory - with the ability to retain data when power is turned off (as do other n ....etc

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Ferroelectric memory is type of semiconductor memory, which exhibit short programming time, low power consumption and nonvolatile memory, making highly suitable for application like contact less smart card, digital cameras which demands many memory write operations.
A ferroelectric memory technology consists of a complementary metal-oxide-semiconductor (CMOS) technology with added layers on top for ferroelectric capacitors. A ferroelectric memory cell has at least one ferroelectric capacitor to store the binary data, and one transistor that pr ....etc

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Ferroelectric Random Access Memory
Abstract
Ferroelectric Random Access Memory Before the 1950€„¢s, ferromagnetic cores were the only type of random-access, nonvolatile memories available. A core memory is a regular array of tiny magnetic cores that can be magnetized in one of two opposite directions, making it possible to store binary data in the form of a magnetic field. The success of the core memory was due to a simple architecture that resulted in a relatively dense array of cells. This approach was emu ....etc

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Zero-capacitor (Z-RAM) is a novel DRAM computer memory technology .Based on the floating body effect of silicon on insulator (SOI) process technology. Z-RAM has been licensed by Advanced Micro Devices for possible use in future microprocessors. This technology offers memory access speeds similar to the standard six-transistor SRAM cell used in cache memory but uses only a single transistor, therefore affording much higher packing densities.Z-RAM relies on the floating body effect, an artifact of the SOI process technology which places transisto ....etc

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