ABSTRACT
While magnetic and semi-conductor based information storage devices have been in use since the middle 1950â„¢s, todayâ„¢s computers and volumes of information require increasingly more efficient and faster methods of storing data. Among the most promising of the new alternatives are photopolymer-based devices, holographic optical memory storage devices, and protein-based optical memory storage using rhodopsin , photosynthetic reaction centers. This paper focuses mainly on protein-based optical memory storage using the photosen ....etc

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Ferroelectric Random Access Memory
Abstract
Ferroelectric Random Access Memory Before the 1950€„¢s, ferromagnetic cores were the only type of random-access, nonvolatile memories available. A core memory is a regular array of tiny magnetic cores that can be magnetized in one of two opposite directions, making it possible to store binary data in the form of a magnetic field. The success of the core memory was due to a simple architecture that resulted in a relatively dense array of cells. This approach was emu ....etc

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INTRODUCTION

Before the 1950â„¢s, ferromagnetic cores were the only type of random-access, nonvolatile memories available. A core memory is a regular array of tiny magnetic cores that can be magnetized in one of two opposite directions, making it possible to store binary data in the form of a magnetic field. The success of the core memory was due to a simple architecture that resulted in a relatively dense array of cells. This approach was emulated in the semiconductor memories of today (DRAMâ„¢s, EEPROMâ„¢s, and FRAMâ„¢s). ....etc

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FERROELECTRIC MEMORY
.INTRODUCTION
*FERROMAGNETIC CORES
*FERROELECTRIC MEMORY
-EXHIBIT SHORT PROGRAMMING TIME
-LOW POWER CONSUMPTION
-NON VOLATILE MEMORY
-FEATURES OF BOTH RAM &ROM
*ARCHITECTURE
BASIC MEMORY CELL STRUCTURE
- 1T,1C (ONE TRANSISTOR ONE CAPACITOR

FERROELECTRIC CAPACITOR ON TOP OF CMOS PROCESS
FERRO ELECTRIC CRYSTAL
Consist of 8 atom of lead at corners
6 atom of oxygen at face centers
1 atom of titanium at cube centers
FERROELE ....etc

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Ferroelectric random accessmemory (FRAM) is a non-volatilememory. FRAM has significanttechnical advantages that enablesolutions not possible with othermemory technology. The underlyingmolecular structure of anFRAM memory cell is shown inFigure 1. When an electric fieldis applied across the ferroelctriccrystal, the central atom moves inthe direction of the applied field.The polarity of this atom remainswhen the electric field is removed,preserving the data withinthe memory without the need forperiodic refresh. Understandingthe ....etc

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Ferroelectric memory is type of semiconductor memory, which exhibit short programming time, low power consumption and nonvolatile memory, making highly suitable for application like contact less smart card, digital cameras which demands many memory write operations.
A ferroelectric memory technology consists of a complementary metal-oxide-semiconductor (CMOS) technology with added layers on top for ferroelectric capacitors. A ferroelectric memory cell has at least one ferroelectric capacitor to store the binary data, and one transistor that pr ....etc

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,
Ferroelectric RAM

abstract

Ferroelectric RAM (FeRAM or FRAM) is a random access memory similar in construction to DRAM but uses a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile memory technologies that offer the same functionality as Flash memory. FeRAM advantages over Flash include: lower power usage, faster write performance and a much greater maximum number (exceeding 1016 for 3.3 V devices) of write-erase ....etc

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ABSTRACT
Ferroelectric memory is a new type of semiconductor memory, which exhibit short programming time, low power consumption and nonvolatile memory, making highly suitable for application like contact less smart card, digital cameras which demands many memory write operations.
A ferroelectric memory technology consists of a complementary metal-oxide-semiconductor (CMOS) technology with added layers on top for ferroelectric capacitors. A ferroelectric memory cell has at least one ferroelectric capacitor ....etc

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I AM SHALU 4TH YEAR EC STUDENT. I NEED FULL REPORT AND PRESENTATION OF FERROELECTRIC MEMORY. KINDLY SEND ME THE ABOVE . ....etc

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ABSTRACT

FRAM is a type of non-volatile read/write random access semiconductor memory. FRAM combines the advantages of SRAM writing is roughly as fast as reading, and EPROM non-volatility and in-circuit programmability. FRAM (ferroelectric RAM) is a random access memory that combines the fast read and write access of dynamic RAM (DRAM) - the most common kind of personal computer memory - with the ability to retain data when power is turned off (as do other n ....etc

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