Random access memory (RAM) is the best known form of computer memory. RAM is considered random access because you can access any memory cell directly if you know the row and column that intersect at that cell. ....etc

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It is a step towards a new breed of computer chips that couple memory with information processing. Such chips retain data when computer is turned off, eliminating the time-consuming process of booting up information from hard drive to processor. If we can make semiconductor based magnetic memories when we turn on computer it would be like a TV set-all information will be there with no need for reloading the operating system. All spintronic computers eliminate the need for parallel processing. Computing could be accelerated and customized with r ....etc

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Ferroelectric Random Access Memory
Abstract
Ferroelectric Random Access Memory Before the 1950€„¢s, ferromagnetic cores were the only type of random-access, nonvolatile memories available. A core memory is a regular array of tiny magnetic cores that can be magnetized in one of two opposite directions, making it possible to store binary data in the form of a magnetic field. The success of the core memory was due to a simple architecture that resulted in a relatively dense array of cells. This approach was emu ....etc

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Random access memory (RAM) is the best known form of computer memory. RAM is considered random access because you can access any memory cell directly if you know the row and column that intersect at that cell.


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It is a step towards a new breed of computer chips that couple memory with information processing. Such chips retain data when computer is turned off, eliminating the time-consuming process of booting up information from hard drive to processor. If we can make semiconductor based magnetic memories when we turn on computer it would be like a TV set-all information will be there with no need for reloading the operating system. All spintronic computers eliminate the need for parallel processing. Computing could be accelerated and cust ....etc

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Magnetic Random Access Memories (M-RAM) : A truly universal memory


Introduction
Recent developments in the physics of spin electronics (see Inset) have enabled the
emergence of a new class of non-volatile memories, Magnetic Random Access Memories
(MRAM). MRAM combine on paper all the virtues of current silicon-based memories: speed,
density, non-volatility, low power consumption, radiation hardness and endurance (see Table
1). The first target for MRAM is ....etc

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You hit the power button on your television and it instantly comes to life. But do the same thing with your computer and you have to wait a few minutes while it goes through its boot-up sequence. Why can't we have a computer that turns on as instantly as a television or radio? IBM, in cooperation with Infenion, is promising to launch a new technology that will eliminate the boot-up process. Magnetic random access memory (MRAM) has the potential to store more data, access that data faster and use less power than current memory technologies.

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You hit the power button on your television and it instantly comes to life. But do the same thing with your computer and you have to wait a few minutes while it goes through its boot-up sequence. Why canâ„¢t we have a computer that turns on as instantly as a television or radio? IBM, in cooperation with Infenion, is promising to launch a new technology that will eliminate the boot-up process. Magnetic random access memory (MRAM) has the potential to store more data, access that data faster and use less power than current memory technologies ....etc

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Magnetic Random Access Memory

MRAM is a nonvolatile random access memory which uses magnetic storage and magnetoresistance (MR) to read the stored data. Magnetoresistive material is a resistor made of common ferromagnetic material which will change in resistance in the presence of a magnetic field. The magnetoresistive property gives a small but sufficient signal to distinguish between a 1 and 0. MRAM results from combining MR storage elements with standard semiconductor fabrication processes. ....etc

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INTRODUCTION

In 1984 Drs. Arthur Pohm and Jim Daughton, both employed at that time by Honeywell, conceived of a new class of magnetoresistance memory devices which offered promise for high density, random access, nonvolatile memory. In 1989 Dr. Daughton left Honeywell to form Nonvolatile Electronics, Inc. having entered into a license agreement allowing him to sublicense Honeywell MRAM technology for commercial applications. Dr. Pohm, Dr. Daughton, and others at NVE continued to improve basic MRAM techno ....etc

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