22-06-2011, 03:06 PM
Single-Electron Transistor (SET) Process and Device Simulation Using SYSNOPSYS TCAD Tools
Abstract:
Simulation of semiconductor device fabrication and operation is important to the design and manufacture of integrated circuits because it provides insights into complex phenomena that cannot obtained through experimentation or simple analytic models. Process and device simulation is commonly using for the design of new very large scale integration (VLSI) devices and processes. Simulation programs serves as exploratory tools in order to gain better understanding of process and device physics. In this research, single-electron transistor (SET) is simulated using Synopsys TCAD simulation tools to improve device performance and reliability or to increase the yield. The Taurus Medici is utilized for SET device simulation and the SET process simulation is utilizing Taurus TSUPREM-4. In addition, the structure of SET device, the capacitance, power, resistance and charging energy of SET device were obtained from these simulations. Ultimately, the SET device is operated at room temperature operation (300K).
Key words: Process simulation, device simulation, synopsys TCAD tools
INTRODUCTION
Computer simulations have emerged as a very elegant way to aid process and device engineers in their task of finding an optimum process. Process and device simulation is commonly use for the design of new very large scale integration (VLSI) devices and processes. Simulation programs serves as exploratory tools in order to gain better understanding of process and device physics[2]. On the other hand, simulations are also carried out after the design phase to optimize certain parameters of a technology, e.g., to improve device performance and reliability or to increase the yield[3]. The application of simulation tools in the development of new processes and novel device structures has become a worthwhile and an alternative to the experimental route[4]. For all these tasks the technology computer-aided design (TCAD)[2, 5-9] was coined. The present TCAD tools used in integrated circuits design can simulate the processes used today and predict the resulting device structure in one, two or three dimensions, eliminating the need for costly experiments[10]. In this study, we focused on the process and device simulation of singleelectron transistor (SET) using Synopsys TCAD tools Taurus TSUPREM-4[11,12] and Taurus MEDICI[13,14] for SET simulation with nanowire length and nanowire width approximately 100nm and 10nm respectively. Simulation tools: TCAD is computer-aided design and engineering used in semiconductor device design, fabrication process design, technology characterization for circuit design, manufacturing yield optimization and process centering, and computer-integrated manufacturing[15]. TCAD process and device simulation tools play a critical role in advanced technology development by giving insight into the relationships between processing choices and nanoscale device performance that cannot be obtained from physical metrology tools alone[16]. TCAD makes its greatest impact when a detailed understanding of the underlying physical mechanisms is tightly coupled within the technology development cycle so that physical insights feed directly into technology directions. The programs available in TCAD (especially Synopsys TCAD) are Taurus TSUPREM-4 and Taurus Medici. Taurus TSUPREM-4 is an advanced onedimensional (1D) and two-dimensional (2D) process simulator for developing semiconductor process technologies and optimizing their performance. With a comprehensive set of advanced process models, Taurus TSUPREM-4 simulates the process steps used for fabricating semiconductor devices, reducing the need for costly experiments using silicon[17]. In addition, Taurus TSUPREM-4 has extensive stress modeling capabilities, allowing optimization of stress to increase device performance[18]. Taurus TSUPREM-4 has the following capabilities[
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