04-03-2010, 03:29 PM
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MINI-PROJECT REPORT ON
IR MUSIC TRANSMITTER AND RECEIVER
ABSTRACT
The project 'IR MUSIC TRANSMITTER AND RECEIVER' is designed to generate audio musical notes using UM66 and heard up to distance of 10 metres. The melody generated is transmitted through infra red and is reproduced at the remote place without any noise and disturbance.
DONE BY
Shainy Peter
Soniya Jose GUIDED BY
Simon Raj an Ms. K. Gnanasheela
Ms. Sumol N. C.
Ms. Seena George
CONTENTS
INTRODUCTION
BLOCK DIAGRAM
CIRCUIT DIAGRAM
CIRCUI DESCRIPTION AND WORKING
PCB LAYOUT
COMPONENT LAYOUT
COST ESTIMATION
CONCLUSION
REFERENCES
DATASHEETS
1. INTRODUCTION
The project kIR MUSIC TRANSMITTER AND RECEIVER' is designed to generate audio musical notes using UM66 and heard up to distance of 10 metres. The melody generated is transmitted through infra red and is reproduced at the remote place without any noise and disturbance.
2. BLOCK DIAGRAM
GENERATOR 1
AMPLIFIER
IR
TRANSMITTER
BATTERY
TRANSMITTER
PI 10TO TRANSISTOR]
PRE AMPLIFIER
AMI
¢R
RECEIVER
Fiu.l
LS
3. CIRCUIT DIAGRAM
9V
220MFBED
1K
l Of-'
C1
BCS4* i
¦4 TK 1
1- I
3 3V
UMS6
22K
TRANSMITTER
i
Ih
w
10K
JJHJ
7 >a-rlK
10K<
PHOTS npn
L#3M I ~\i
SUSSES
100K
RECEIVE!
L .
I
4. WORKING EXPLANATION
Transmitter
The transmitter section consists of a melody generatoe 1C UM66 to generate the lone. It will continuously generate musical tones. The output is fed to the IR driver stage built arround two transistors BC547 and BD140 to get more range.
The red led will flicker according to the musical tones. IR led will transmit the modulated music as infrared beam.
Receiver
The IR musical receiver uses I ,M741 and I.IM386. The IR beam from the transmitter is hi Led on photo transistor 1.141!. The current How through the photo transistor will be according with the incident IR beam. Hence the pre amplifier will fed by an analog signal corresponding to the transmitted signal. After the pre amplification, the signal is fed to the audio amplifier I.M386 via potentiometer. The melody generated is heard through the speaker. By varying the potentiometer the volume can be changed by the user.
5. PCB LAYOUT
Receiver
6. COMPONENT LAYOUT
7. COST ESTIMATION
COMPONENTS QTY RATE COST
BD140 1 3.00 3.00
LM741 1 10.00 10.00
I.M386 1 20.00 20.00
UM66 1 20.00 20.00
SPEAKER 1 25.00 25.00
I/4W RESISTOR 10 0.25 2.50
47K PRESET 2 5.00 10.00
BC547 2 2.50 5.00
9V BATTERY 2 70.00 140.00
1N4007 2 1,00 2.00
I0MFD/25V CAPACITOR 4 2.50 10.00
0.1MFD DISC CAPACITOR 5 1.00 5.00
8PIN IC BASE 2 1.00 2.00
LM7805 1 10.00 10.00
PCB 150.00 1 50.00
WIRE [OMtr 5.00 50.00
IR LED 2 10.00 20.00
PHOTO TRANSISTOR I 70.00 70.00
SOLDI'.RING IRON (25 W) 1 200.00 200.00
SOLDER & FLUX 1 50.00 50.00
EXTRA 350.00
TOTAL 1048.50
8. CONCLUSION
The IR MUSICAL TRANSMITTER AND RECEIVER we designed is working properly. By doing the project, we got a lot of experience with the electronic components and more over we learn the PCB designing tips.
9. REFERENCE
electronics for you (jan2007)
national.com
fairchild.com
google.com
FAIRCHJLO
MICONDUCTDR'
fairchildsemi.com
KA78XX/KA78XXA
3-Terminal 1A Positive Voltage Regulator
Features
¢ Output Current up to l A
¢ Output Voltages of 5, 6, 8,9, 10, 12, 15, 18, 24V
¢ Thermal Overload Protection
¢ Short Circuit Protection
¢ Output Transistor Safe Operating Area Protection
Description
The K.A78XX/KA78XXA series of three-terminal positive regulator are available in the TO-220/D-PAK package and with several fixed output voltages, making them useful in a wide range of applications. Each type employs internal current limiting, thermal shut down and safe operating area protection, making it essentially indestructible. If adequate heat sinking is provided, they can deliver over 1A output current. Although designed primarily as fixed voltage regulators, these devices can be used with external components to obtain adjustable voltages and currents.
INPUT
SERIES
PASS
ELEMENT
OUTPUT
-o
©2001 Fairchild Semiconductor Corporation
REFERENCE VOLTAGE
Rev. 1.0.0
®
MOTOROLA
LM833
Dual Low Noise, Audio Amplifier
The LM833 is a standard low-cost monolithic dual general-purpose operational amplifier employing Bipolar technology with innovative high-performance concepts for audio systems applications. With high frequency PNP transistors, the LM833 offers low voltage noise (4.5 nV7/Hz ), 15 MHz gain bandwidth product, 7.0 V/jis slew rate, 0.3 mV input offset voltage with 2.0 \i\fl°C temperature coefficient of input offset voltage. The LM833 output stage exhibits no deadband crossover distortion, large output voltage swing, excellent phase and gain margins, low open loop high frequency output impedance and symmetrical source/sink AC frequency response.
The LM833 is specified over the automotive temperature range and is available in the plastic DIP and SO-8 packages (P and D suffixes). For an improved performance dual/quad version, see the MC33079 family.
¢ Low Voltage Noise: 4.5 nV/v'Hz
¢ High Gain Bandwidth Product: 15 MHz
¢ High Slew Rate: 7.0 V/us
¢ Low Input Offset Voltage: 0.3 mV
¢ Low T.C. of Input Offset Voltage: 2.0 uV/°C
¢ Low Distortion: 0.002%
¢ Excellent Frequency Stability
¢ Dual Supply Operation
DUAL OPERATIONAL AMPLIFIER
SEMICONDUCTOR TECHNICAL DATA
D SUFFIX
PLASTIC PACKAGE CASE 751 (SO-8)
© Motorola, Inc. 1996
LM833
ELECTRICAL CHARACTERISTICS (Vrjc = +15 V, VFE = -15 V, TA = 25°C, unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
Input Offset Voltage (R$ = 10 ft Vo = 0 V) VlO - 0.3 5.0 mV
Average Temperature Coefficient of Input Offset Voltage RS = 10 ft V0 = 0 V, TA = T,ow to Thigh AVio/AT - 2.0 - uV/°C
Input Offset Current (VQM = 0 V, Vo = 0 V) llO - 10 200 nA
Input Bias Current (VCM = 0 V, Vo = 0 V) >IB - 300 1000 nA
Common Mode Input Voltage Range VICR -12 +14 -14 +12 V
Large Signal Voltage Gain (R|_ = 2.0 kft Vo = ±10 V AVOL 90 110 - dB
Output Voltage Swing: RL = 2.0 kft V|D = 1.0 V RL = 2.0 kQ V|D= 1.0 V RL = 10k£l'V|D = 1.0V R|_ = 10kUV|D = 1.0V v0+ v0-
Vo+
vo- 10 12 13.7 -14.1
13.9 -14.7 -10 -12 V
Common Mode Rejection (Vin = ±12 V) CMR 80 100 - dB
Power Supply Rejection (V$ = 15 V to 5.0 V, -15 V to -5.0 V) PSR 80 115 - dB
Power Supply Current (VQ = 0 V, Both Amplifiers) ID - 4,0 8.0 mA
AC ELECTRICAL CHARACTERISTICS (VCc = +15 V, VEE = -15 V, TA = 25°C, unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
Slew Rate (Vjn = -10 V to +10 V. R|_ = 2.0 kft Ay = +1.0) SR 5.0 7.0 - V/us
Gain Bandwidth Product (f = 100 kHz) GBW 10 15 - MHz
Unity Gain Frequency (Open Loop) fu - 9.0 - MHz
Unity Gain Phase Margin (Open Loop) em - 60 - Deg
Equivalent Input Noise Voltage (Rs = 100 ft f = 1.0 kHz) en - 4.5 - nV/,Hz
Equivalent Input Noise Current (f = 1.0 kHz) in - 0.5 - pA/THz
Power Bandwidth (Vo = 27 Vpp, RL = 2.0 kft THD <, 1.0%) BWP - 120 - kHz
Distortion (R|_ = 2.0 kft f = 20 Hz to 20 kHz, Vo = 3.0 Vrms, Ay = +1.0) THD - 0.002 - %
Channel Separation (f = 20 Hz to 20 kHz) cs - -120 - dB
Figure 1. Maximum Power Dissipation versus Temperature
400
200
800
s
V i
\
\
V
\
\
>
0 50 100
TA, AMBIENT TEMPERATURE (°C)
ZD
99 200
O-2
-50
150
125
2
MOTOROLA ANALOG IC DEVICE DATA
|iA741r(iA741Y
GENERAL-PURPOSE OPERATIONAL AMPLIFIERS
SLOS094B - NOVEMBER 1970- REVISED SEPTEMBFR 2000
Short-Circuit Protection Offset-Voltage Null Capability Large Common-Mode and Differential Voltage Ranges
No Frequency Compensation Required Low Power Consumption No Latch-Up
Designed to Be Interchangeable With Fairchild |iA741
description
The uA741 is a general-purpose operational amplifier featuring offset-voltage null capability.
The high common-mode input voltage range and the absence of latch-up make the amplifier ideal for voltage-follower applications. The device is short-circuit protected and the internal frequency compensation ensures stability without external components. A low value potentiometer may be connected between the offset null inputs to null out the offset voltage as shown in Figure 2.
The uA741C is characterized for operation from 0C to 70 C. The uA741l is characterized for operation from -40:C to 85°C.The uA741M is characterized for operation over the full military temperature range of-55°C to 125°C.
symbol
NC ] 4 IN- ]5
NC ]6
IN+ ] 7 NC ] 8
UJ
CJ u. o o u Z O Z 2 z
I 11 11 11 11 I
3 2 1 20 19
18[ NC 17[ Vcc+ 16[ NC 15[ OUT 4[ NC
9 10 11 12 13
io 51 o
U 2 Z 2 > UJ
NC - No internal connection
Pmduos conform to specifications per the terms of Texas Instruments
sisr&nl warranry. Production processing does not necessarily include res' Tg of 3f! parameters.
of publication date. Copyright" 2000, Texas Instruments Incorporated
ofTexa* "
Texas Instruments
POST OFKICF BOX 655303 ¢ DALLAS. TEXAS 75265
LiA741f LIA741Y
GENERAL-PURPOSE OPERATIONAL AMPLIFIERS
SLOS094B- NOVEMBER 1970 - REVISED SEPTEMBER 2000
AVAILABLE OPTIONS
TA PACKAGED DEVICES CHIP FORM
(Y)
SMALL OUTLINE (D) CHIP CARRIER (FK) CERAMIC DIP (J) CERAMIC DIP (JG) PLASTIC DIP (P) TSSOP (PW) FLAT PACK (U)
0;C to 70<C UA741CD UA741CP UA741CPW U.A741Y
-40 C to 85 C U.A741ID UA741IP
-55'C to 125'C UA741MFK UA741MJ U.A741MJG UA741MU
The D package is available taped and reeled. Add the suffix R (e.g.. U.A741CDR).
Component Count
Diode Capacitor
TEXAS INSTRUMENTS
POST OfFICt BOX 655303 ¢ DALLAS, TEXAS 75265
schematic
BC548 BC548A BC548B BC548C
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics.
Absolute Maximum Ratings* TA = 25"C unless otherwise noted
Symbol Parameter Value Units
VcEO Collector-Emitter Voltage 30 V
VcES Collector-Base Voltage 30 V
VEBO Emitter-Base Voltage 5.0 V
lc Collector Current - Continuous 500 mA
Tj. T5tg Operating and Storage Junction Temperature Range -55 to +150 °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics TA - 25°C unless otherwise noted
Symbol Characteristic Max Units
BC548/A/B/C
PD Total Device Dissipation 625 mW
Derate above 25°C 5.0 mW/°C
RSJC Thermal Resistance, Junction to Case 83.3 °C/W
Raj A Thermal Resistance, Junction to Ambient 200 °C/W
1997 Fairchild Semiconductor Corporation
548-ABC. Rev B
