Thyristor RAM ('T-RAM) is a new type of DRAM computer memory invented and developed by T-RAM Semiconductor, which departs from the usual designs of memory cells, combining the strengths of the DRAM and SRAM: high speed and high volume. This technology exploits the electrical property known as negative differential resistance and is called thin capacitively-coupled thyristor used to create memory cells capable of very high packing densities. This memory is highly scalable and already has a storage density that is several times higher than found ....etc

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Resistive random-access memory (RRAM) is a new non-volatile memory type . Basic idea is that a dielectric, which is normally insulating can be made to conduct through a filament or conduction path formed after application of a sufficiently high voltage. The conduction path formation can arise from different mechanisms, including defects, metal migration, etc. Once the filament is formed, it may be reset (broken, resulting in high resistance) or set (re-formed, resulting in lower resistance) by an appropriately applied voltage. Different forms o ....etc

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Zero-capacitor (Z-RAM) is a novel DRAM computer memory technology .Based on the floating body effect of silicon on insulator (SOI) process technology. Z-RAM has been licensed by Advanced Micro Devices for possible use in future microprocessors. This technology offers memory access speeds similar to the standard six-transistor SRAM cell used in cache memory but uses only a single transistor, therefore affording much higher packing densities.Z-RAM relies on the floating body effect, an artifact of the SOI process technology which places transisto ....etc

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