name dinesh
mini projet report
Voltage source inverters (VSI) have been widely used in uninterruptible power supplies, unified power flow controllers or unified power quality conditioners, and distributed generation systems (DGS). VSIs are inherently efficient, compact, and economical devices used to control power flow and provide quality supply. VSIs can be classified as voltage-controlled VSIs (VCVSIs) and current-controlled VSIs (CCVSIs), depending on their control mechanism. In this paper, a detailed comparison of VCVSIs and CCVSIs for DG ....etc

[:=Read Full Message Here=:]

circuit diagram of over under voltage protection of electrical applications ....etc

[:=Read Full Message Here=:]

An IGCT is a special type of thyristor similar to a GTO. They can be turned on and off by a gate signal, have lower conduction loss as compared to GTOs, and withstand higher rates of voltage rise (dv/dt), such that no snubber is required for most applications.

The structure of an IGCT is very similar to a GTO thyristor. In an IGCT, the gate turn off current is greater than the anode current. This results in a complete elimination of minority carrier injection from the lower PN junction and faster turn off times. The main difference is a red ....etc

[:=Read Full Message Here=:]

I NEED A PPT ON THIS TOPIC IITS URGENT.... REPLY ME QUICKLY
....etc

[:=Read Full Message Here=:]

circuit diagram of over under voltage protectn of electrical applicatins using lm324 ....etc

[:=Read Full Message Here=:]

i want over voltage and under voltage protection doc for mini project please help me ....etc

[:=Read Full Message Here=:]

The Integrated Gate Commutated Thyristor (IGCT) is a new high-power semiconductor device. IGCT is a special type of thyristor similar to a GTO. They can be turned on and off by a gate signal, have lower conduction loss as compared to GTOs, and withstand higher rates of voltage rise (dv/dt), such that no snubber is required for most applications.The structure of an IGCT is very similar to a GTO thyristor. In an IGCT, the gate turn off current is greater than the anode current. This results in a complete elimination of minority carrier injection ....etc

[:=Read Full Message Here=:]

ABSTRACT
The Integrated Gate Commutated Thyristor (IGCT) combines the advantages of the hard driven GTO thyristor, including its dramatically improved turn- off performance, with technological breakthroughs at the device, gate-drive and application levels. Homogenous switching area of the IGCT up to the dynamic avalanche limits. Snubber circuits are no longer needed. Improved loss characteristics allow high frequency applications extending into the kHz range. A new ....etc

[:=Read Full Message Here=:]

A High Input Voltage Three-Phase ZVZCS DC-DC Converter with Vin /3 Voltage Stress on Primary Switches
Abstract
A high-voltage three-phase ZVZCS dc-dc converterwith low voltage stress is presented in this paper. The voltagestress on the primary switches is only one-third of the inputvoltage. By using the phase shift pulsewidth modulation (PWM)and secondary snubber, four of the six primary switches areoperating with zero-voltage switching (ZVS) and two of them areoperating with zero-current switching (ZCS), in order to reducethe switch ....etc

[:=Read Full Message Here=:]

I need integrated gate-commutated thyristor ppt. ....etc

[:=Read Full Message Here=:]