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Title: Integrated gate commutated thyristor IGCT Seminar REPORT
Page Link: Integrated gate commutated thyristor IGCT Seminar REPORT -
Posted By: electronics seminars
Created at: Thursday 31st of December 2009 10:04:04 PM
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ABSTRACT
The Integrated Gate Commutated Thyristor (IGCT) combines the advantages of the hard driven GTO thyristor, including its dramatically improved turn- off performance, with technological breakthroughs at the device, gate-drive and application levels. Homogenous switching area of the IGCT up to the dynamic avalanche limits. Snubber circuits are no longer needed. Improved loss characteristics allow high frequency applications extending into the kHz range. A new ....etc

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Title: IGCT
Page Link: IGCT -
Posted By: sonu
Created at: Sunday 18th of October 2009 09:57:16 PM
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Title: Integrated gate-commutated thyristor IGCT
Page Link: Integrated gate-commutated thyristor IGCT -
Posted By: mechanical engineering crazy
Created at: Saturday 29th of August 2009 02:48:27 AM
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An IGCT is a special type of thyristor similar to a GTO. They can be turned on and off by a gate signal, have lower conduction loss as compared to GTOs, and withstand higher rates of voltage rise (dv/dt), such that no snubber is required for most applications.

The structure of an IGCT is very similar to a GTO thyristor. In an IGCT, the gate turn off current is greater than the anode current. This results in a complete elimination of minority carrier injection from the lower PN junction and faster turn off times. The main difference is a red ....etc

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Title: integrated gate commutated thyristor igct ppt
Page Link: integrated gate commutated thyristor igct ppt -
Posted By:
Created at: Sunday 01st of September 2013 12:03:47 AM
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Title: integrated gate commutated thyristor igct ppt
Page Link: integrated gate commutated thyristor igct ppt -
Posted By:
Created at: Thursday 21st of April 2016 10:07:11 PM
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Title: IGCT
Page Link: IGCT -
Posted By: computer science crazy
Created at: Sunday 21st of September 2008 12:42:29 PM
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Introduction

Thyristor technology is inherently superior to transistor for blocking voltage values above 2.5kV, plasma distributions equal to those of diodes offering the best trade-off between the on-state and blocking voltages. Until the introduction of newer power switches, the only serious contenders for high-power transportation systems and other applications were the GTO (thyristor), with its cumbersome snubbers, and the IGBT (transistor), with its inherently high losses. Until now, adding the gate turn-off feature has resulted in GTO ....etc

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Title: IGCT
Page Link: IGCT -
Posted By: computer science crazy
Created at: Wednesday 08th of April 2009 02:33:26 AM
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Introduction

Thyristor technology is inherently superior to transistor for blocking voltage values above 2.5kV, plasma distributions equal to those of diodes offering the best trade-off between the on-state and blocking voltages. Until the introduction of newer power switches, the only serious contenders for high-power transportation systems and other applications were the GTO (thyristor), with its cumbersome snubbers, and the IGBT (transistor), with its inherently high losses. Until now, adding the gate turn-off feature has resulted in GTO ....etc

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Title: ppt of igctreport of igct
Page Link: ppt of igctreport of igct -
Posted By: Jinu Shaju
Created at: Thursday 07th of July 2011 02:09:47 AM
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Title: vi characteristics of igct
Page Link: vi characteristics of igct -
Posted By:
Created at: Tuesday 05th of June 2018 03:35:04 AM
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Title: igct
Page Link: igct -
Posted By: Computer Science Clay
Created at: Sunday 01st of March 2009 04:51:42 PM
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igct

Thyristor technology is inherently superior to transistor for blocking voltage values above 2.5kV, plasma distributions equal to those of diodes offering the best trade-off between the on-state and blocking voltages. Until the introduction of newer power switches, the only serious contenders for high-power transportation systems and other applications were the GTO (thyristor), with its cumbersome snubbers, and the IGBT (transistor), with its inherently high losses. Until now, adding the gate t ....etc

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