Strong Field-Effect in Graphene on SiC



Graphene, consisting of monolayer thick carbon, can be produced as an isolated layer (exfoliated graphite) or as an epitaxial layer on a SiC(0001) surface. We have used the latter method to produce graphene on 4H-SiC by heating at 1300°C in ultra-high vacuum with in-situ monitoring by electron diffraction. The graphene formation is performed at CMU, while transistor fabrication (with 1.5x0.5 mm2 channel area) is performed at Sarnoff Corp. A ....etc

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GRAPHENE FET’S: PROMISES AND CHALLENGES
Abstract:
We present a critical review of graphene for field-effect transistor (FET) application. By using graphene sheet as the channel material, the new FET is expected offer significant advantages in certain aspects over and above that of the present Si-based counterpart. There are many challenges as well since the overall operating principle of the FET channel is different. We present our perspective with regard to these challenges. The most exciting properties of g ....etc

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advantages and disadvantages of graphene on mechanical , chemical ,electrical and any other properties.in addition to its suitability for constructing chemical process equipment and economical consideration ....etc

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Abstract:
Graphene, which consists of just a single atomic layer of carbon atoms bound into crystal lattice, is the hottest new material system considered for applications in future electronics and sensors. The properties, which make graphene so desirable for future electronics, are its extremely high electrical and thermal conductivities. For any transistor to be useful for communications or information processing, the level of the electronic low-frequency noise (also referred to as 1/f or flicker noise) has to be r ....etc

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