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INTEREST in nitride-based localized trapping storage Flash memory cells has revived for 10-min-cell operation, which can double the memory density. Besides, they also show better scalability since charges are stored in nitride traps rather than a poly silicon floating-gate in conventional Flash memory cells. Nitride storage memories do not have floating-gate-induced drain turn-on and coupling issues, which are believed to be the scaling limitations of conventional floating-gate memories .Various operation schemes were pro ....etc

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