ABSTRACT
BiCMOS technology is a combination of Bipolar and CMOS technology. CMOS technology offers less power dissipation, smaller noise margins, and higher packing density. Bipolar technology, on the other hand, ensures high switching and I/O speed and good noise performance. It follows that BiCMOS technology accomplishes both - improved speed over CMOS and lower power dissipation than bipolar technology. The main drawback of BiCMOS technology is the higher costs due to the added process complexity. Impurity profiles have ....etc

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The history of semiconductor devices starts in 1930?s when Lienfed and Heil first proposed the mosfet. However it took 30 years before this idea was applied to functioning devices to be used in practical applications, and up to the late 1980 this trend took a turn when MOS technology caught up and there was a cross over between bipolar and MOS share.CMOS was finding more wide spread use due to its low power dissipation, high packing density and simple design, such that by 1990 CMOS covered more than 90% of total MOS scale. In 1983 bipolar compa ....etc

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i want information on this topic for giving a seminar on it......
thank you!!!!!! ....etc

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The history of semiconductor devices starts in 1930â„¢s when Lienfed and Heil first proposed the mosfet. However it took 30 years before this idea was applied to functioning devices to be used in practical applications, and up to the late 1980 this trend took a turn when MOS technology caught up and there was a cross over between bipolar and MOS share.CMOS was finding more wide spread use due to its low power dissipation, high packing density and simple design, such that by 1990 CMOS covered more than 90% of total MOS scale.

In 1983 bipo ....etc

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Common Emitter BJT Amplifier Design Current Mirror Design


Some Random Observations
● Conditions for stabilized voltage source biasing
● Emitter resistance, RE, is needed.
● Base voltage source will have finite resistance, RB.
● needs to be much larger than RB.
● Small RB - relative to RS - will attenuate input signal.
● Larger RE permits larger RB, but results in lower gain.
● Gain = -RC/RE for RE >> re.
● Split RE with bypassing increa ....etc

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The need for high-performance, low-power, and low-cost systems for network transport and wireless communications is driving silicon technology toward higher speed, higher integration, and more functionality. Further more, this integration of RF and analog mixed-signal circuits into high-performance digital signal-processing (DSP) systems must be done with minimum cost overhead to be commercially viable. While some analog and RF designs have been attempted in mainstream digital-only complimentary metal-oxide semiconductor (C ....etc

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The need for high-performance, low-power, and low-cost systems for network transport and wireless communications is driving silicon technology toward higher speed, higher integration, and more functionality.

Further more, this integration of RF and analog mixed-signal circuits into high-performance digital signal-processing (DSP) systems must be done with minimum cost overhead to be commercially viable.

While some analog and RF designs have been attempted in mainstream digital-only complimentary metal-oxide semiconductor (CMOS) technolo ....etc

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BiCMOS Technology

Introduction
The need for high-performance, low-power, and low-cost systems for network transport and wireless communications is driving silicon technology toward higher speed, higher integration, and more functionality.

Further more, this integration of RF and analog mixed-signal circuits into high-performance digital signal-processing (DSP) systems must be done with minimum cost overhead to be commercially viable. While some analog and RF designs have been attempted in mainstream digital-only complimentary metal-oxid ....etc

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1. INTRODUCTION
The history of semiconductor devices starts in 1930â„¢s when Lienfed and Heil first proposed the mosfet. However it took 30 years before this idea was applied to functioning devices to be used in practical applications, and up to the late 1980 this trend took a turn when MOS technology caught up and there was a cross over between bipolar and MOS share.CMOS was finding more wide spread use due to its low power dissipation, high packing density and simple design, such that by 1990 CMOS ....etc

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Introduction

The history of semiconductor devices starts in 1930's when Lienfed and Heil first proposed the mosfet. However it took 30 years before this idea was applied to functioning devices to be used in practical applications, and up to the late 1980 this trend took a turn when MOS technology caught up and there was a cross over between bipolar and MOS share.CMOS was finding more wide spread use due to its low power dissipation, high packing density and simple design, such that by 1990 CMOS covered more than 90% of total MOS scale.

In ....etc

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