BiCMOS Technology

The need for high-performance, low-power, and low-cost systems for network transport and wireless communications is driving silicon technology toward higher speed, higher integration, and more functionality.

Further more, this integration of RF and analog mixed-signal circuits into high-performance digital signal-processing (DSP) systems must be done with minimum cost overhead to be commercially viable.

While some analog and RF designs have been attempted in mainstream digital-only complimentary metal-oxide semiconductor (CMOS) technologies, almost all designs that require stringent RF performance use bipolar or semiconductor technology.

Silicon integrated circuit (IC) products that, at present, require modern bipolar or BiCMOS silicon technology in wired application space include the essential optical network (SONET) and synchronous digital hierarchy (SDH) operating at 10 Gb/s and higher.
The viability of a mixed digital/analog. RF chip depends on the cost of making the silicon with the required elements; in practice, it must approximate the cost of the CMOS wafer, Cycle times for processing the wafer should not significantly exceed cycle times for a digital CMOS wafer.

Yields of the SOC chip must be similar to those of a multi-chip implementation. Much of this article will examine process techniques that achieve the objectives of low cost, rapid cycle time, and solid yield...
BiCMOS Technology
Combines Bipolar and CMOS transistors in a single integrated circuit
By retaining benefits of bipolar and CMOS, BiCMOS is able to achieve VLSI circuits with speed-power-density performance previously unattainable with either technology individually.
Characteristics of CMOS Technology
Lower static power dissipation
Higher noise margins
Higher packing density – lower manufacturing cost per device
High yield with large integrated complex functions
High input impedance (low drive current)
Scaleable threshold voltage
High delay sensitivity to load (fan-out limitations)
Low output drive current (issue when driving large capacitive loads)
Low transconductance, where transconductance, gm a Vin
Bi-directional capability (drain & source are interchangeable)
A near ideal switching device
Characteristics of Bipolar Technology
Higher switching speed
Higher current drive per unit area, higher gain
Generally better noise performance and better high frequency characteristics
Better analogue capability
Improved I/O speed (particularly significant with the growing importance of package limitations in high speed systems).
high power dissipation
lower input impedance (high drive current)
low voltage swing logic
low packing density
low delay sensitivity to load
high gm (gm a Vin)
high unity gain band width (ft) at low currents
essentially unidirectional
Combine advantages in BiCMOS Technology
• It follows that BiCMOS technology goes some way towards combining the virtues
of both CMOS and Bipolar technologies
• Design uses CMOS gates along with bipolar totem-pole stage where driving of high
capacitance loads is required
• Resulting benefits of BiCMOS technology over solely CMOS or solely bipolar :
• Improved speed over purely-CMOS technology
• Lower power dissipation than purely-bipolar technology (simplifying packaging and board requirements)
• Flexible I/Os (i.e., TTL, CMOS or ECL) –
BiCMOS technology is well suited for I/O intensive applications.
ECL, TTL and CMOS input and output levels can easily be generated with no
speed or tracking consequences
• high performance analogue
• Latchup immunity (Discussed later in course)
The simplified BiCMOS Inverter
• T3 & T4 present low impedances when turned on into saturation & load CL will be
charged or discharged rapidly
• Output logic levels will be good & will be close to rail voltages since VCEsat is quite
small & VBE » 0.7V. Therefore, inverter has high noise margins
• Inverter has high input impedance, i.e., MOS gate input
• Inverter has low output impedance
• Inverter has high drive capability but occupies a relatively small area
• However, this is not a good arrangement to implement since no discharge path
exists for current from the base of either bipolar transistor when it is being turned
off, i.e.,
• when Vin=Vdd, T2 is off and no
conducting path to the base of T4 exists
• when Vin=0, T1 is off and
no conducting path to the base of T3 exists
This will slow down the action of the circuit


Important Note..!

If you are not satisfied with above reply ,..Please


So that we will collect data for you and will made reply to the request....OR try below "QUICK REPLY" box to add a reply to this page
Popular Searches: bicmos with microwind, bicmos bandgap reference, atlantic technology 8200elr, roverer technology**pum nilathadineer atharaman** **pdf image authentication techniques, pptopensource technology, the atlantic technology at, workbook for technology of,

Quick Reply
Type your reply to this message here.

Image Verification
Please enter the text contained within the image into the text box below it. This process is used to prevent automated spam bots.
Image Verification
(case insensitive)

Possibly Related Threads...
Thread Author Replies Views Last Post
  Flying Windmills or Flying Electric Generator (FEG) technology project report helper 9 23,944 02-10-2018, 03:32 PM
Last Post: Guest
Last Post: [email protected]
  Advancements In Inverter Technology For Industrial Applications project report tiger 18 24,282 17-04-2017, 12:30 PM
Last Post: jaseela123d
  Cellonics Technology computer science crazy 2 3,857 07-03-2016, 11:39 AM
Last Post: seminar report asees
  Wavelet Video Processing Technology computer science crazy 8 8,096 05-03-2015, 02:30 PM
Last Post: Guest
  Circuit Breaker Maintenance by Mobile Agent Software Technology project topics 16 13,996 23-04-2014, 08:27 PM
Last Post: Guest
  Thermal infrared imaging technology seenas 3 1,927 30-09-2013, 11:28 AM
Last Post: computer topic
  GEOTHERMAL POWER GENERATING TECHNOLOGY project topics 11 9,496 25-06-2013, 10:00 AM
Last Post: computer topic
  Magnetohydrodynamic power generation technology (MHD ) computer science crazy 13 22,802 20-06-2013, 05:51 PM
Last Post: Guest
  SMARTGRID TECHNOLOGY seminar class 7 6,696 06-02-2013, 09:58 AM
Last Post: seminar details

Forum Jump: