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A SONOS memory cell is formed from a standard polysilicon NMOS transistor with the addition of a small sliver of silicon nitride inserted inside the transistor's gate oxide. The sliver of nitride is non-conductive but contains a large number of charge trapping sites able to hold an electrostatic charge. The nitride layer is electrically isolated from the surrounding transistor, although charges stored on the nitride directly affect the conductivity of the underlying transistor channel. The oxide/nitride sandwich typically consists of a 2 nm thi..............etc

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ABSTRACT
While magnetic and semi-conductor based information storage devices have been in use since the middle 1950â„¢s, todayâ„¢s computers and volumes of information require increasingly more efficient and faster methods of storing data. Among the most promising of the new alternatives are photopolymer-based devices, holographic optical memory storage devices, and protein-based optical memory storage using rhodopsin , photosynthetic reaction centers. This paper focuses mainly on protein-based optical memory storage using the photosen..............etc

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The limits of pushing storage density to the atomic scale are explored with a memory that stores a bit by the presence or absence of one silicon atom. These atoms are positioned at lattice sites along self-assembled tracks with a pitch of five atom rows. The memory can be initialized and reformatted by controlled deposition of silicon. The writing process involves the transfer of Si atoms to the tip of a scanning tunnelling microscope. The limits of pushing storage density to the atomic scale are explored with a memory that stores a bit by the ..............etc

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A Phase Change Memory as a Secure Main Memory
A Seminar Report
by
Abdul Nassar A A
M105101
Department of Computer Science & Engineering
College of Engineering Trivandrum
Kerala - 695016
2010-11




Contents
1 Introduction 5
2 PCM Technology 6
2.1 History and background . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.2 Memory cell . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.3 Operation . . . . . . . . . . ..............etc

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