12-01-2012, 11:29 AM
Nonvolatile Memristor Memory
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INTRODUCTION
Low-power high-density memory devices are critical to a
very wide range of integrated applications. With IC
technology scaling, there exists a great interest in searching
for the next generation of universal memories, which are
able to ubiquitously replace traditional SRAM, DRAM and
nonvolatile memories such as flash memory [1]
3. PROPOSED DESIGN EQUATIONS
Starting from the established device characteristics
shown in the previous section, we derive a set of compact
closed-form expressions that provide important design
guidance, which is employed in the following sections. In
particular, we show how the memristance can be controlled
by the applied flux and we achieve the same goal for the
memristor state. Note that the flux is the integral of the
applied voltage. These developments provide a critical
basis for us to understand the role of the applied voltage in
read and write operations of a memristor memory cell.
PROPOSED CIRCUIT DESIGN
Based on the derived insights, in this section, we propose
read and write schemes for memristor memories and
discuss the associated circuit design issues associated with
read, write stabilities and data integrity.
