Name– study of diode matrix ROM.
Aim – to study the process of memory storage and memory address locations.
Apparatus – rectifier diodes, circuit board, DC power supply, resistors, connecting wires, soldering iron, cutter etc.
Circuit diagram –




Brief theory – a read only memory (ROM) can store thousands of binary numbers representing computer instructions and data. Some of the smaller ROMs are also used to implement t ....etc

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SHAPE MEMORY ALLOYS
Introduction
Shape memory alloys (SMA's) are metals, which exhibit two very unique properties, pseudo-elasticity, and the shape memory effect. Arne Olander first observed these unusual properties in 1938 (Oksuta and Wayman 1998), but not until the 1960's were any serious research advances made in the field of shape memory alloys. The most effective and widely used alloys include NiTi (Nickel - Titanium), CuZnAl, and CuAlNi.
The two unique properties described above are made possi ....etc

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application of shape memory alloys ....etc

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Novel shape memory effect (SME) and pseudoelastic behavior are discovered in single-crystalline Au, Cu, and Ni nanowires with lateral dimensions of 1.5-10 nm. Under tensile loading and unloading, these wires can recover elongations of up to 50%, well beyond the recoverable strains of 5-8% typical for most bulk shape memory alloys (SMAs). Results of atomistic simulations and evidences from experiments show that this phenomenon only exists at the nanometer scale and is associated with a reversible crystallographic lattice reorientation driven byt ....etc

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SHAPE MEMORY ALLOYS

INTRODUCTION
Shape memory alloys are the alloys which exhibit shape memory effect
If such alloys are plastically deformed at one temperature, they will completely recover their shape on being raised to a higher temperature
INTRODUCTION
In recovering their shape alloys can produce a displacement or force (or both in some cases) as a function of temperature
We can make metals change shape, change position, expand, compress with heat as the only activator
Because of these propert ....etc

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Composites of shape memory alloys (SMA) with a matrix have been widely studied to suppress the propagation of damage. In these studies, the SMA is used as an actuator. A multi-functional SMA as both sensor and actuator is suitable for constructing intelligent material, such as a material with a sensing and suppressing function. The damage of materials is related to the amount of strain. We studied the use of SMA wire parts as sensors to measure the amount of strain for damage estimation. The acoustic emission (AE) signals induced by phase tran ....etc

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A Phase Change Memory as a Secure Main Memory
A Seminar Report
by
Abdul Nassar A A
M105101
Department of Computer Science & Engineering
College of Engineering Trivandrum
Kerala - 695016
2010-11




Contents
1 Introduction 5
2 PCM Technology 6
2.1 History and background . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.2 Memory cell . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.3 Operation . . . . . . . . . . ....etc

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ABSTRACT
While magnetic and semi-conductor based information storage devices have been in use since the middle 1950â„¢s, todayâ„¢s computers and volumes of information require increasingly more efficient and faster methods of storing data. Among the most promising of the new alternatives are photopolymer-based devices, holographic optical memory storage devices, and protein-based optical memory storage using rhodopsin , photosynthetic reaction centers. This paper focuses mainly on protein-based optical memory storage using the photosen ....etc

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I want it for studies in smart material. ....etc

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Novel shape memory effect (SME) and pseudoelastic behavior are discovered in single-crystalline Au, Cu, and Ni nanowires with lateral dimensions of 1.5-10 nm. Under tensile loading and unloading, these wires can recover elongations of up to 50%, well beyond the recoverable strains of 5-8% typical for most bulk shape memory alloys (SMAs). Results of atomistic simulations and evidences from experiments show that this phenomenon only exists at the nanometer scale and is associated with a reversible crystallographic lattice reorientation driven byt ....etc

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