INTRODUCTION
Nano materials
-Nanoscale computer architecture

Self assembly by DNA hybridization
-Assemble more complex 3-D structure
RG-FET
Is novel--nature of its fabrication & placement within self-assembling device structure
Can be incorporated into a DNA-guided self assembly process
By chemically attaching different DNA strands to each end of rod
--Nano-porous alumina synthesis of silicon nano rods
N-type RG-FET
N-type RG-FET…
Similar in structure to ....etc

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GRAPHENE FET’S: PROMISES AND CHALLENGES
Abstract:
We present a critical review of graphene for field-effect transistor (FET) application. By using graphene sheet as the channel material, the new FET is expected offer significant advantages in certain aspects over and above that of the present Si-based counterpart. There are many challenges as well since the overall operating principle of the FET channel is different. We present our perspective with regard to these challenges. The most exciting properties of g ....etc

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ppt for Fermi fet technology and PDF file for fermi field effect transistor technology ....etc

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INTRODUCTION
Nano materials
-Nanoscale computer architecture

Self assembly by DNA hybridization
-Assemble more complex 3-D structure
RG-FET
Is novel--nature of its fabrication & placement within self-assembling device structure
Can be incorporated into a DNA-guided self assembly process
By chemically attaching different DNA strands to each end of rod
--Nano-porous alumina synthesis of silicon nano rods
N-type RG-FET
N-type RG-FET…
Similar in structure to surrounding gate ....etc

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i want the ppt of the topic fermi fet technology......plz post it as soon as possible..... ....etc

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Hi I am sudheer I would like to get details on ppt seminar on tunnel fet. So, please provide me related data so it would help me for seminar ....etc

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please post me about the advantages and disadvantages of FERMI FET TECHNOLOGY. ....etc

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The introduction of FinFET Technology has opened new chapters in Nano-technology. Simulations show that FinFET structure should be scalable down to 10 nm. Formation of ultra thin fin enables suppressed short channel effects. It is an attractive successor to the single gate MOSFET by virtue of its superior electrostatic properties and comparative ease of manufacturability. Since the fabrication of MOSFET, the minimum channel length has been shrinking continuously. The motivation behind this decrease has been an increasing in ....etc

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i am final year be student. selected technical seminar as fermifet technology.
can you upload fermifet ppt.. ....etc

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ABSTRACT
Fermi-FET transistor technology can lead to significant improvement in circuit performance, layout density, power requirements, and manufacturing cost with only a moderate alteration of traditional MOSFET manufacturing technology. This technology makes use of a subtle optimization of traditional buried channel technology to overcome the known shortcomings of buried channel while maintaining large improvements in channel mobility. This technology merges the mobility and low drain current leakage of BCA ....etc

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