Thyristor RAM ('T-RAM) is a new type of DRAM computer memory invented and developed by T-RAM Semiconductor, which departs from the usual designs of memory cells, combining the strengths of the DRAM and SRAM: high speed and high volume. This technology exploits the electrical property known as negative differential resistance and is called thin capacitively-coupled thyristor used to create memory cells capable of very high packing densities. This memory is highly scalable and already has a storage density that is several times higher than found ....etc

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Nano Ram(NRAM) or Nonvolatile random access memory. It is one of the new memory storage technologies. When compare to the other Ram the NRAM technology is separated were as it is in nonvolatile form of memory the data will be keep hold of even when the power is off. NRAM does not need any power to refresh; it will retain its memory still after the power is removed. NRAM is also much faster than DRAM. When compare to the DRAM the both read and write procedure are in low energy, were it produce long battery life in conventional devices.NRAM will ....etc

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Nano Ram - Seminar Presentation

Nano-RAM, is a proprietary computer memory technology from the company Nantero and NANOMOTOR is invented by University of bologna and California nano systems.NRAM is a type of nonvolatile random access memory based on the mechanical position of carbon nanotubes deposited on a chip-like substrate. In theory the small size of the nanotubes allows for very high density memories.

Nantero also refers to it as NRAM in short, but this acronym is also commonly used as a s ....etc

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Zero-capacitor (Z-RAM) is a novel DRAM computer memory technology .Based on the floating body effect of silicon on insulator (SOI) process technology. Z-RAM has been licensed by Advanced Micro Devices for possible use in future microprocessors. This technology offers memory access speeds similar to the standard six-transistor SRAM cell used in cache memory but uses only a single transistor, therefore affording much higher packing densities.Z-RAM relies on the floating body effect, an artifact of the SOI process technology which places transisto ....etc

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ABSTRACT

Materials Science research is now entered a new phase where the structure and properties of materials are investigated, characterized and controlled at the nanoscale. Though as sophisticated as their larger counterparts, these devices are still burdened because they rely on an outside power. The size of the entire device is determined by the size of the power source. Batteries and other traditional sources are too large, and tend to negate the size advantages of nano devices. Also, batteries being used at present ....etc

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