FRAM

Before the 1950's, ferromagnetic cores were the only type of random-access, nonvolatile memories available. A core memory is a regular array of tiny magnetic cores that can be magnetized in one of two opposite directions, making it possible to store binary data in the form of a magnetic field. The success of the core memory was due to a simple architecture that resulted in a relatively dense array of cells. This approach was emulated in the semiconductor memories of today (DRAM's, EEPROM's, a..............etc

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FRAM

Before the 1950's, ferromagnetic cores were the only type of random-access, nonvolatile memories available. A core memory is a regular array of tiny magnetic cores that can be magnetized in one of two opposite directions, making it possible to store binary data in the form of a magnetic field. The success of the core memory was due to a simple architecture that resulted in a relatively dense array of cells. This approach was emulated in the semiconductor memories of today (DRAM's, EEPROM's, a..............etc

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Definition

Before the 1950's, ferromagnetic cores were the only type of random-access, nonvolatile memories available. A core memory is a regular array of tiny magnetic cores that can be magnetized in one of two opposite directions, making it possible to store binary data in the form of a magnetic field. The success of the core memory was due to a simple architecture that resulted in a relatively dense array of cells. This approach was emulated in the semiconductor memories of today (DRAM's, EEPROM's, and FRAM's).

Ferromagnetic cores, ho..............etc

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Before the 1950?s, ferromagnetic cores were the only type of random-access, nonvolatile memories available. A core memory is a regular array of tiny magnetic cores that can be magnetized in one of two opposite directions, making it possible to store binary data in the form of a magnetic field. The success of the core memory was due to a simple architecture that resulted in a relatively dense array of cells. This approach was emulated in the semiconductor memories of today (DRAM?s, EPROM?s, and FRAM?s). Ferromagnetic cores, however, were too bul..............etc

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FRAM MCUKey Strengths and Applications

Introduction
Ferroelectric Random Access Memory (FRAM) microcontroller (MCU), which features embedded, non-volatile FRAM, is part of the company’s 8-bit microcontroller 8FX family. The new embedded FRAM memory technology can be configured either as Read-Only Memory (ROM) or Random- Access Memory (RAM). The FRAM microcontroller has the added benefits of high-speed programming and low power consumption. The FRAM memory technology, its benefits, applications, to ....etc

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Definition
Ovonyx is developing a microelectronics memory technology called Ovonic Unified Memory (OUM). This technology is originally developed by Mr. Stanford Ovshinsky and exclusively licensed from Energy Conversion Devices (ECD) Inc. Ovonic unified memory -- its name is derived from ''Ovshinsky'' and ''electronic''. OVM is also known as phase change memory because it uses unique thin-film phase change material to store information economically and with excellent solid-state memory properties. It would be the replacement of conventional mem ....etc

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Ferroelectric random accessmemory (FRAM) is a non-volatilememory. FRAM has significanttechnical advantages that enablesolutions not possible with othermemory technology. The underlyingmolecular structure of anFRAM memory cell is shown inFigure 1. When an electric fieldis applied across the ferroelctriccrystal, the central atom moves inthe direction of the applied field.The polarity of this atom remainswhen the electric field is removed,preserving the data withinthe memory without the need forperiodic refresh. Understandingthe ....etc

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Definition
Ovonyx is developing a microelectronics memory technology called Ovonic Unified Memory (OUM). This technology is originally developed by Mr. Stanford Ovshinsky and exclusively licensed from Energy Conversion Devices (ECD) Inc. Ovonic unified memory -- its name is derived from ''Ovshinsky'' and ''electronic''. OVM is also known as phase change memory because it uses unique thin-film phase change material to store information economically and with excellent solid-state memory properties. It would be the replacement of conventional mem ....etc

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Definition

The high-tech industry has spent decades creating computer systems with ever mounting degrees of complexity to solve a wide variety of business problems. Ironically, complexity itself has become part of the problem. As networks and distributed systems grow and change, they can become increasingly hampered by system deployment failures, hardware and software issues, not to mention human error. Such scenarios in turn require further human intervention to enhance the performance and capacity of IT components. This drives up the overa ....etc

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FRAM MCUKey Strengths and Applications

Introduction
Ferroelectric Random Access Memory (FRAM) microcontroller (MCU), which features embedded, non-volatile FRAM, is part of the company’s 8-bit microcontroller 8FX family. The new embedded FRAM memory technology can be configured either as Read-Only Memory (ROM) or Random- Access Memory (RAM). The FRAM microcontroller has the added benefits of high-speed programming and low power consumption. The FRAM memory technology, its benefits, applications, to..............etc

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ABSTRACT

FRAM is a type of non-volatile read/write random access semiconductor memory. FRAM combines the advantages of SRAM writing is roughly as fast as reading, and EPROM non-volatility and in-circuit programmability. FRAM (ferroelectric RAM) is a random access memory that combines the fast read and write access of dynamic RAM (DRAM) - the most common kind of personal computer memory - with the ability to retain data when power is turned off (as do other n ....etc

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ABSTRACT
Ferroelectric memory is a new type of semiconductor memory, which exhibit short programming time, low power consumption and nonvolatile memory, making highly suitable for application like contact less smart card, digital cameras which demands many memory write operations.
A ferroelectric memory technology consists of a complementary metal-oxide-semiconductor (CMOS) technology with added layers on top for ferroelectric capacitors. A ferroelectric memory cell has at least one ferroelectric capacitor ....etc

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