MAGNATORESISTIVE RAM (MRAM)
#4
Presented by:-
Deepak Kumar rout

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TRADITIONAL RAM
Dynamic random-access memory (DRAM) is a type of random-access memory that stores each bit of data in a separate capacitor within an integrated circuit. The capacitor can be either charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1
DEFINATION
MRAM (magnetoresistive random access memory) is a method of storing data bits using magnetic charges instead of the electrical charges used by DRAM (dynamic random access memory).
HOW MRAM WORKS
Magnetoresistive Random Access Memory is a non-volatile computer memory (NVRAM)
1.By passing current the magnetic polarity is set to either 1 or 0. Information is then read by passing another current through the rail and measuring resistance
2..Because the spin state of the electron is stored magnetically, MRAM does not require a constant charge of electricity to maintain the polarity of each rail.
3..write capability does not degrade at nearly the rate of current solid-state flash technology.
MRAM Cell
1.Magnetoresistive random access memory (MRAM) uses the magnetic tunnel junction (MTJ) to store information
2. MRAM cell composed of a diode and an MTJ stack
3. MTJ stack consists of two ferromagnetic layers separated by a thin dielectric barrier
Comparison with other
Density:-

The main determinant of a memory system's cost is the density of the components used to make it up. Smaller components, and fewer of them, mean that more "cells" can be packed onto a single chip, This improves yield, which is directly related to cost.
Power consumption:-
This demands a constant power supply, which is why DRAM loses its memory when power is turned off on the computer. As DRAM cells decrease in size, the refresh cycles become shorter, and the power draw more continuous.
In contrast, MRAM requires no refresh at any time. Not only does this mean it retains its memory with the power turned off, but also that there is no constant power draw.
Performance:-
DRAM performance is limited by the rate at which the charge stored in the cells can be drained (for reading) or stored (for writing)
MRAM operation is based on measuring voltages rather than charges or currents, so there is less "settling time" needed.
APPLICATIONS:-
1.Aerospace and military systems
2.Digital cameras
3.Notebooks
4.Smart cards
5.Mobile telephones
6.Cellular base stations
7.Personal Computers
8.Battery-Backed SRAM replacement
9.Datalogging specialty memories (black box solutions)
10.Media players
11.Book readers
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Messages In This Thread
RE: MAGNATORESISTIVE RAM (MRAM) - by seminar class - 09-04-2011, 03:56 PM
RE: MAGNATORESISTIVE RAM (MRAM) - by satya2000 - 06-03-2012, 05:18 PM

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